HDP-CVD氧化沉积300mm工艺降解薄氧化物

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI:10.1109/ICICDT.2004.1309980

Si-Woo Lee, Changmoon Ahn, B. Kim, S. Chang, D.H. Han, C. An, J. Won, Jaeyoung Kim, Seungwook Jung, Dongho-Shin, Kyungseok Oh, Won-seong Lee, Donggun Park

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引用次数: 3

摘要

研究了在沉积时间、等离子体功率、工艺温度和电极间距等不同工艺条件下薄氧化物的降解。通过对300mm晶圆全面积的BV和Qbd测量，我们发现在较长的HDP-CVD工艺时间、较高的等离子体功率和较高的工艺温度下，氧化物容易被破坏。它还与电极间距等设备参数密切相关。通过光导机制较好地解释了氧化降解现象。

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Thin oxide degradation from HDP-CVD oxide deposition in 300mm process

Degradation of thin oxide is investigated under various HDP-CVD process conditions such as deposition time, plasma power, process temperature and electrode spacing. We observed that the oxide is vulnerable to be damaged at longer HDP-CVD process time, higher plasma power and higher process temperature using BV and Qbd measurement in whole area of 300mm wafers. It also strongly related with the equipment parameter such as electrode spacing. The oxide degradation phenomena were rather successfully explained by charging damage through photoconduction mechanism.

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来源期刊

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)

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