面向故障模式的闪存缺陷诊断

Mu-Hsien Hsu, Yu-Tsao Hsing, J. Yeh, Cheng-Wen Wu
{"title":"面向故障模式的闪存缺陷诊断","authors":"Mu-Hsien Hsu, Yu-Tsao Hsing, J. Yeh, Cheng-Wen Wu","doi":"10.1109/MTDT.2006.13","DOIUrl":null,"url":null,"abstract":"In order to ease the time-to-market pressure of flash memory, we propose a fault-pattern based diagnosis methodology that reduces the burden in yield learning. The fault-pattern based diagnosis approach is based on defect dictionary and ATE log file. The proposed diagnosis method allows product engineers to quickly isolate defect candidates. In this paper we use open/short defects to demonstrate our method. We propose a diagnostic test algorithm for flash memory based on the targeted defect models. The length of the new diagnostic test is shorter than previous ones, so diagnosis time can be reduced. Experimental results show that the diagnostic resolution of fault-pattern based method reaches 83.3% for a NOR-type flash, and 100% for a NAND-type flash. We also present a current test to improve the diagnostic resolution for NOR-type flash, so its diagnostic resolution can reach 100% as well","PeriodicalId":320365,"journal":{"name":"2006 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT'06)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Fault-pattern oriented defect diagnosis for flash memory\",\"authors\":\"Mu-Hsien Hsu, Yu-Tsao Hsing, J. Yeh, Cheng-Wen Wu\",\"doi\":\"10.1109/MTDT.2006.13\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to ease the time-to-market pressure of flash memory, we propose a fault-pattern based diagnosis methodology that reduces the burden in yield learning. The fault-pattern based diagnosis approach is based on defect dictionary and ATE log file. The proposed diagnosis method allows product engineers to quickly isolate defect candidates. In this paper we use open/short defects to demonstrate our method. We propose a diagnostic test algorithm for flash memory based on the targeted defect models. The length of the new diagnostic test is shorter than previous ones, so diagnosis time can be reduced. Experimental results show that the diagnostic resolution of fault-pattern based method reaches 83.3% for a NOR-type flash, and 100% for a NAND-type flash. We also present a current test to improve the diagnostic resolution for NOR-type flash, so its diagnostic resolution can reach 100% as well\",\"PeriodicalId\":320365,\"journal\":{\"name\":\"2006 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT'06)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-08-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT'06)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MTDT.2006.13\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT'06)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.2006.13","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

为了缓解闪存的上市时间压力,我们提出了一种基于故障模式的诊断方法,以减轻良率学习的负担。基于故障模式的诊断方法是基于缺陷字典和ATE日志文件。所提出的诊断方法允许产品工程师快速分离候选缺陷。在本文中,我们使用开放/短缺陷来演示我们的方法。提出了一种基于目标缺陷模型的闪存诊断测试算法。新的诊断测试的长度比以前的短,因此可以减少诊断时间。实验结果表明,基于故障模式的方法对nor型闪存的诊断准确率达到83.3%,对nand型闪存的诊断准确率达到100%。本文还提出了一种提高nor型闪存诊断分辨率的测试方法,使其诊断分辨率达到100%
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fault-pattern oriented defect diagnosis for flash memory
In order to ease the time-to-market pressure of flash memory, we propose a fault-pattern based diagnosis methodology that reduces the burden in yield learning. The fault-pattern based diagnosis approach is based on defect dictionary and ATE log file. The proposed diagnosis method allows product engineers to quickly isolate defect candidates. In this paper we use open/short defects to demonstrate our method. We propose a diagnostic test algorithm for flash memory based on the targeted defect models. The length of the new diagnostic test is shorter than previous ones, so diagnosis time can be reduced. Experimental results show that the diagnostic resolution of fault-pattern based method reaches 83.3% for a NOR-type flash, and 100% for a NAND-type flash. We also present a current test to improve the diagnostic resolution for NOR-type flash, so its diagnostic resolution can reach 100% as well
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信