用于单端信令方案电源完整性分析的I/O供电电流综合

Jayong Koo, M. R. Quddus, B. Silva, A. Norman
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引用次数: 2

摘要

当有多个通道并行传输数据时,单端信令I/O接口产生的同时交换噪声(SSN)非常显著。存储器接口使用单端信令方案,其中功率传输噪声频谱可能与平台内的一些关键无线电频段或共振频率相吻合,这取决于从驱动器缓冲区传输的位模式。这将对时序裕度产生不利影响,并可能成为电磁干扰(EMI)源之一。虽然在SSN估计中使用晶体管缓冲模型是好的,但它可能会显著增加复杂性,导致模拟时间过长或收敛问题。该方法利用晶体管缓冲器从0到1和从1到0的瞬态供电电流,合成任意位模式和数据速率的全供电电流。这使得电源电流曲线具有高精度,同时最大限度地降低了电源完整性仿真的复杂性。该方法可扩展到三态缓冲器和不同的信道终止方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
I/O supply current synthesis for power integrity analysis of single-ended signaling scheme
The simultaneous switching noise (SSN) from single-ended signaling I/O interfaces is significant when there are multiple channels transmitting data in parallel. The memory interfaces use the single-ended signaling scheme where the power delivery noise spectrum may coincide with some critical radio bands or resonance frequencies within the platform depending on the bit pattern being transmitted from the driver buffers. This will adversely affect the timing margin and can be one of the electromagnetic interference (EMI) sources as well. While it is good to use transistor buffer models in SSN estimation, it may significantly increase the complexity resulting in too long simulation time or convergence problems. The suggested method takes the transient supply currents when the transistor buffer transits its state from 0 to 1 and from 1 to 0, and synthesizes the full supply current for an arbitrary bit-pattern and data rate. This allows high accuracy in the supply current profiles while minimizing the power integrity simulation complexity. The method is extendable to tri-state buffers and different channel termination schemes.
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