一种先进的2.5nm氧化氮栅极电介质，用于高可靠的0.25/spl μ m mosfet

1997 Symposium on VLSI Technology Pub Date : 1997-06-10 DOI:10.1109/VLSIT.1997.623687

Yamamoto, Ogura, Saito, Uwasawa, Tatsumi, Mogami

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引用次数: 8

摘要

超薄栅极介质是实现CMOS器件高性能、低电压工作的重要材料。提出并评价了一种先进的超薄栅极电介质形成工艺，即硅的直接氮化和顺序氧化，以抑制硼的渗透并提高热载流子的可靠性。采用2.5nm氧化氮栅极介质的mosfet实现了无硼渗透、更长的热载子寿命和更高的漏极电流。

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An Advanced 2.5nm Oxidized Nitride Gate Dielectric For Highly Reliable 0.25/spl mu/m MOSFETs

Ultrathin gate dielectrics are important to realize high performance and low-voltage operation CMOS devices. An advanced ultrathin gate dielectric formation process, that is, direct nitridation of silicon and sequential oxidation, is proposed and evaluated to suppress boron penetration and to improve hot-carrier reliability. No boron penetration, longer hot-carrier lifetime and high drain current are achieved in MOSFETs with 2.5nm oxidized nitride gate dielectric.

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1997 Symposium on VLSI Technology

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