氟对三层(1.6/2.2/5.2 nm)氮化栅极氧化物先进CMOS工艺的影响

2003 8th International Symposium Plasma- and Process-Induced Damage. Pub Date : 2003-04-24 DOI:10.1109/PPID.2003.1200945

T. Hook, R. Kontra, J. Burnham, M. Lavoie

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引用次数: 1

摘要

氟被引入到三氧化物(1.6/2.2/5.2 nm) 90 nm氮化氧化物CMOS技术的pet和net。虽然对fet栅极氧化物的影响相对微妙，但对fet的影响非常显著。氧化物的有效厚度增加0.5 nm，大部分氮被去除，并且薄膜的结构完整性受到损害。电数据，SIMS, TEM和HRTEM分析被用来表征薄膜。

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The effect of fluorine in an advanced CMOS process with triple (1.6/2.2/5.2 nm) nitrided gate oxide

Fluorine is introduced into the PFET and NFET of a triple-oxide (1.6/2.2/5.2 nm) 90 nm nitrided-oxide CMOS technology. While the effects on the PFET gate oxide are relatively subtle, the NFET is very significantly affected. The effective thickness of the oxide increases by 0.5 nm, much of the nitrogen is removed, and the structural integrity of the film is compromised. Electrical data, SIMS, TEM, and HRTEM analysis are used to characterize the films.

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2003 8th International Symposium Plasma- and Process-Induced Damage.

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