微秒范围内半导体材料的高级热加工

W. Skorupa, R. Yankov, M. Voelskow, W. Anwand, D. Panknin, R. Mcmahon, Michael Smith, T. Gebel, L. Rebohle, R. Fendler, W. Hentsch
{"title":"微秒范围内半导体材料的高级热加工","authors":"W. Skorupa, R. Yankov, M. Voelskow, W. Anwand, D. Panknin, R. Mcmahon, Michael Smith, T. Gebel, L. Rebohle, R. Fendler, W. Hentsch","doi":"10.1109/RTP.2005.1613684","DOIUrl":null,"url":null,"abstract":"This paper reviews the advances that flash lamp annealing brings to the processing of the most frequently used semiconductor materials, namely silicon and silicon carbide, thus enabling the fabrication of novel microelectronic structures and materials. The paper describes how such developments can translate into important practical applications leading to a wide range of technological benefits. Opportunities in ultra-shallow junction formation, heteroepitaxial growth of thin films of cubic silicon carbide on silicon, and crystallization of amorphous silicon films, along with the technical reasons for using flash lamp annealing are discussed in the context of state-of-the-art materials processing","PeriodicalId":253409,"journal":{"name":"2005 13th International Conference on Advanced Thermal Processing of Semiconductors","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Advanced thermal processing of semiconductor materials in the msec-range\",\"authors\":\"W. Skorupa, R. Yankov, M. Voelskow, W. Anwand, D. Panknin, R. Mcmahon, Michael Smith, T. Gebel, L. Rebohle, R. Fendler, W. Hentsch\",\"doi\":\"10.1109/RTP.2005.1613684\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reviews the advances that flash lamp annealing brings to the processing of the most frequently used semiconductor materials, namely silicon and silicon carbide, thus enabling the fabrication of novel microelectronic structures and materials. The paper describes how such developments can translate into important practical applications leading to a wide range of technological benefits. Opportunities in ultra-shallow junction formation, heteroepitaxial growth of thin films of cubic silicon carbide on silicon, and crystallization of amorphous silicon films, along with the technical reasons for using flash lamp annealing are discussed in the context of state-of-the-art materials processing\",\"PeriodicalId\":253409,\"journal\":{\"name\":\"2005 13th International Conference on Advanced Thermal Processing of Semiconductors\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 13th International Conference on Advanced Thermal Processing of Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RTP.2005.1613684\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 13th International Conference on Advanced Thermal Processing of Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RTP.2005.1613684","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

摘要

本文综述了闪光灯退火技术在硅和碳化硅这两种最常用的半导体材料的加工中所取得的进展,从而使新型微电子结构和材料的制造成为可能。本文描述了这些发展如何转化为重要的实际应用,从而带来广泛的技术效益。在最先进的材料加工背景下,讨论了超浅结形成的机会,硅上立方碳化硅薄膜的异质外延生长,非晶硅薄膜的结晶,以及使用闪光灯退火的技术原因
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Advanced thermal processing of semiconductor materials in the msec-range
This paper reviews the advances that flash lamp annealing brings to the processing of the most frequently used semiconductor materials, namely silicon and silicon carbide, thus enabling the fabrication of novel microelectronic structures and materials. The paper describes how such developments can translate into important practical applications leading to a wide range of technological benefits. Opportunities in ultra-shallow junction formation, heteroepitaxial growth of thin films of cubic silicon carbide on silicon, and crystallization of amorphous silicon films, along with the technical reasons for using flash lamp annealing are discussed in the context of state-of-the-art materials processing
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