一种带有互补凸形散热器和腔体加热器的CMOS MEMS皮拉尼真空计

2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS) Pub Date : 2014-03-13 DOI:10.1109/MEMSYS.2014.6765731

Yi-Chiang Sun, K.-C Liang, Chao-Lin Cheng, W. Fang

{"title":"一种带有互补凸形散热器和腔体加热器的CMOS MEMS皮拉尼真空计","authors":"Yi-Chiang Sun, K.-C Liang, Chao-Lin Cheng, W. Fang","doi":"10.1109/MEMSYS.2014.6765731","DOIUrl":null,"url":null,"abstract":"A novel CMOS-MEMS Pirani vacuum gauge with complementary bump heat-sink and cavity heater design has been proposed and demonstrated. This design using CMOS-MEMS process to offer the following advantages for Pirani gauge: (1) The bump heat-sink vertical integrates with cavity heater increases the dynamic range and sensitivity without changing device footprint size, (2) The cavity in heater reduces the thermal mass for low-power operation, and (3) Easy integration with packaged CMOS-MEMS devices for pressure monitoring [1]. The design is implemented using the standard TSMC 0.18μm 1P6M CMOS process. A 120μm×120μm die size with 0.53μm sensing gap is demonstrated. Measurement indicates the gauge has sensing range 0.3-100torr with sensitivity of 1.53×104(K/W)/torr. The power consumption is 67μW for 1% resistance change. In comparison, the gauge with typical heat-sink/heater design has sensing range 1-100torr with sensitivity of 0.99×104(K/W)/torr and power consumption of 119μW.","PeriodicalId":312056,"journal":{"name":"2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A CMOS MEMS Pirani vacuum gauge with complementary bump heat sink and cavity heater\",\"authors\":\"Yi-Chiang Sun, K.-C Liang, Chao-Lin Cheng, W. Fang\",\"doi\":\"10.1109/MEMSYS.2014.6765731\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel CMOS-MEMS Pirani vacuum gauge with complementary bump heat-sink and cavity heater design has been proposed and demonstrated. This design using CMOS-MEMS process to offer the following advantages for Pirani gauge: (1) The bump heat-sink vertical integrates with cavity heater increases the dynamic range and sensitivity without changing device footprint size, (2) The cavity in heater reduces the thermal mass for low-power operation, and (3) Easy integration with packaged CMOS-MEMS devices for pressure monitoring [1]. The design is implemented using the standard TSMC 0.18μm 1P6M CMOS process. A 120μm×120μm die size with 0.53μm sensing gap is demonstrated. Measurement indicates the gauge has sensing range 0.3-100torr with sensitivity of 1.53×104(K/W)/torr. The power consumption is 67μW for 1% resistance change. In comparison, the gauge with typical heat-sink/heater design has sensing range 1-100torr with sensitivity of 0.99×104(K/W)/torr and power consumption of 119μW.\",\"PeriodicalId\":312056,\"journal\":{\"name\":\"2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-03-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.2014.6765731\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2014.6765731","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

提出并演示了一种具有凸形散热器和腔体加热器互补设计的新型CMOS-MEMS皮拉尼真空表。本设计采用CMOS-MEMS工艺，为皮拉尼压力表提供以下优势:(1)凸形散热器与空腔加热器垂直集成，在不改变器件占地尺寸的情况下增加了动态范围和灵敏度;(2)加热器中的空腔减少了热质量，实现了低功耗工作;(3)易于与封装的CMOS-MEMS器件集成，用于压力监测[1]。该设计采用台积电0.18μm 1P6M标准CMOS工艺实现。实验证明了具有0.53μm传感间隙的120μm×120μm芯片尺寸。测量表明，压力表的感应范围为0.3-100torr，灵敏度为1.53×104(K/W)/torr。电阻变化1%时，功耗为67μW。典型散热器/加热器设计的测量范围为1 ~ 100torr，灵敏度为0.99×104(K/W)/torr，功耗为119μW。

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A CMOS MEMS Pirani vacuum gauge with complementary bump heat sink and cavity heater

A novel CMOS-MEMS Pirani vacuum gauge with complementary bump heat-sink and cavity heater design has been proposed and demonstrated. This design using CMOS-MEMS process to offer the following advantages for Pirani gauge: (1) The bump heat-sink vertical integrates with cavity heater increases the dynamic range and sensitivity without changing device footprint size, (2) The cavity in heater reduces the thermal mass for low-power operation, and (3) Easy integration with packaged CMOS-MEMS devices for pressure monitoring [1]. The design is implemented using the standard TSMC 0.18μm 1P6M CMOS process. A 120μm×120μm die size with 0.53μm sensing gap is demonstrated. Measurement indicates the gauge has sensing range 0.3-100torr with sensitivity of 1.53×104(K/W)/torr. The power consumption is 67μW for 1% resistance change. In comparison, the gauge with typical heat-sink/heater design has sensing range 1-100torr with sensitivity of 0.99×104(K/W)/torr and power consumption of 119μW.

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2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS)

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