{"title":"通过填充金属结构增强互连","authors":"Sameer Shekhar, A. Jain, C. Kuan","doi":"10.1109/IEMT.2016.7761944","DOIUrl":null,"url":null,"abstract":"This paper analyses use of solid metal fill between BGA balls or LGA pins of packages, and between die bumps. The basic principle is to benefit from higher metal-density per unit volume of the substrate in the current path to deliver enhanced electrical, thermal and mechanical performance. Paper conceptualizes different structures and simulated data is presented to show case benefits. Results show power delivery impedance peak reduction by 10 % in the 100 kHz-10 MHz range. In addition, package inductor benefit of 40 % lower DC resistance is reported.","PeriodicalId":237235,"journal":{"name":"2016 IEEE 37th International Electronics Manufacturing Technology (IEMT) & 18th Electronics Materials and Packaging (EMAP) Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Enhanced interconnects through filled metal structures\",\"authors\":\"Sameer Shekhar, A. Jain, C. Kuan\",\"doi\":\"10.1109/IEMT.2016.7761944\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper analyses use of solid metal fill between BGA balls or LGA pins of packages, and between die bumps. The basic principle is to benefit from higher metal-density per unit volume of the substrate in the current path to deliver enhanced electrical, thermal and mechanical performance. Paper conceptualizes different structures and simulated data is presented to show case benefits. Results show power delivery impedance peak reduction by 10 % in the 100 kHz-10 MHz range. In addition, package inductor benefit of 40 % lower DC resistance is reported.\",\"PeriodicalId\":237235,\"journal\":{\"name\":\"2016 IEEE 37th International Electronics Manufacturing Technology (IEMT) & 18th Electronics Materials and Packaging (EMAP) Conference\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 37th International Electronics Manufacturing Technology (IEMT) & 18th Electronics Materials and Packaging (EMAP) Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEMT.2016.7761944\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 37th International Electronics Manufacturing Technology (IEMT) & 18th Electronics Materials and Packaging (EMAP) Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMT.2016.7761944","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Enhanced interconnects through filled metal structures
This paper analyses use of solid metal fill between BGA balls or LGA pins of packages, and between die bumps. The basic principle is to benefit from higher metal-density per unit volume of the substrate in the current path to deliver enhanced electrical, thermal and mechanical performance. Paper conceptualizes different structures and simulated data is presented to show case benefits. Results show power delivery impedance peak reduction by 10 % in the 100 kHz-10 MHz range. In addition, package inductor benefit of 40 % lower DC resistance is reported.