Si:P δ层导线中的量子输运

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI:10.23919/SISPAD49475.2020.9241610

J. P. Mendez, D. Mamaluy, Xujiao Gao, E. Anderson, Deanna Campbell, J. Ivie, T. Lu, S. Schmucker, S. Misra

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引用次数: 3

摘要

我们采用全电荷自洽量子输运形式，结合启发式弹性散射模型，研究了Si:P δ层导线在低温4 K下的局域态密度(LDOS)和导电性能。模拟使我们能够解释最近在高分辨率角分辨光谱学实验中观察到的浅导电子带的起源。我们的LDOS分析表明，自由电子在空间上被分离成具有不同平均动能的层，这与弹性散射一起，必须考虑到在很大范围内δ-层供体密度上获得的片电阻值。

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Quantum Transport in Si:P δ-Layer Wires

We employ a fully charge self-consistent quantum transport formalism, together with a heuristic elastic scattering model, to study the local density of state (LDOS) and the conductive properties of Si:P δ-layer wires at the cryogenic temperature of 4 K. The simulations allow us to explain the origin of shallow conducting sub-bands, recently observed in high resolution angle-resolved photoemission spectroscopy experiments. Our LDOS analysis shows the free electrons are spatially separated in layers with different average kinetic energies, which, along with elastic scattering, must be accounted for to reproduce the sheet resistance values obtained over a wide range of the δ-layer donor densities.

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2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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