具有优越导通开关特性的4500v沟槽iets

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856811

H. Ninomiya, J. Takahashi, K. Sugiyama, T. Inoue, S. Hasegawa, T. Ogura, H. Ohashi

{"title":"具有优越导通开关特性的4500v沟槽iets","authors":"H. Ninomiya, J. Takahashi, K. Sugiyama, T. Inoue, S. Hasegawa, T. Ogura, H. Ohashi","doi":"10.1109/ISPSD.2000.856811","DOIUrl":null,"url":null,"abstract":"Turn-on characteristics of 4500 V trench IEGTs are discussed. First, turn-on switching power loss was measured using an inductive load circuit. As a result, the turn-on switching power loss of trench IEGTs was smaller than that of planer IEGTs because of high density of MOS-channels. Then di/dt ruggedness of trench IEGTs was measured using a LC resonance circuit. It is concluded that trench IEGTs have a sufficiently di/dt ruggedness.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"4500 V trench IEGTs having superior turn-on switching characteristics\",\"authors\":\"H. Ninomiya, J. Takahashi, K. Sugiyama, T. Inoue, S. Hasegawa, T. Ogura, H. Ohashi\",\"doi\":\"10.1109/ISPSD.2000.856811\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Turn-on characteristics of 4500 V trench IEGTs are discussed. First, turn-on switching power loss was measured using an inductive load circuit. As a result, the turn-on switching power loss of trench IEGTs was smaller than that of planer IEGTs because of high density of MOS-channels. Then di/dt ruggedness of trench IEGTs was measured using a LC resonance circuit. It is concluded that trench IEGTs have a sufficiently di/dt ruggedness.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856811\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856811","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

讨论了4500v沟槽型晶体管的导通特性。首先，用电感负载电路测量了导通开关功率损耗。结果表明，由于mos通道密度高，沟槽型晶体管的导通开关功率损耗比平面型晶体管小。然后采用LC谐振电路测量了沟槽型iets的di/dt坚固度。结果表明，沟槽式锚杆具有足够的di/dt坚固性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

4500 V trench IEGTs having superior turn-on switching characteristics

Turn-on characteristics of 4500 V trench IEGTs are discussed. First, turn-on switching power loss was measured using an inductive load circuit. As a result, the turn-on switching power loss of trench IEGTs was smaller than that of planer IEGTs because of high density of MOS-channels. Then di/dt ruggedness of trench IEGTs was measured using a LC resonance circuit. It is concluded that trench IEGTs have a sufficiently di/dt ruggedness.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

自引率

0.00%

发文量