考虑水分的包装结构完整性分析

Xuejun Fan, Jiang Zhou, A. Chandra
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引用次数: 40

摘要

当电子封装暴露在潮湿环境中时,有三种类型的故障:焊接回流时的爆米花故障,无电偏压的HAST分层和开裂,以及偏压下的腐蚀。尽管破坏机制不同,但湿气诱发破坏的共同和最重要的因素是在湿气存在下粘结强度的降低。因此,了解界面在水分作用下的行为成为分析封装完整性和可靠性的关键。本文首先介绍了几种表征湿气作用下界面高温断裂韧性或粘接强度的方法。以硅片上的聚酰亚胺与底填料(PI/UF)的界面为载体,研究了水分的影响。采用基于界面断裂力学的断裂韧性测量技术和模剪试验等快转方法研究了含湿界面的力学行为。说明了几种样品制备方法的细节,通过这些方法可以使断裂保持在所需的界面上。给出了水分对断裂韧性影响的关键结果。其次,综述了吸湿膨胀表征技术。由于水分扩散是一个缓慢的过程,用于吸湿膨胀测量的试样往往受到不均匀的水分分布。这成为获得吸湿膨胀系数的潜在隐藏误差。已经设计了解析解来预测由水分分布不均匀引起的误差。提出了一种获得精确膨胀特性的简单方法。采用热重- tma法和云纹干涉法测量了几种下填体的吸湿膨胀特性。这两种方法之间取得了很好的一致性。在吸湿膨胀表征之后,本文提出了一种新的方法,允许对吸湿和热失配引起的包体变形和应力进行时间相关的非线性有限元分析。这是一个具有挑战性的问题,因为常用的商业有限元软件如ABAQUS和ANSYS不明确地允许完全耦合的非线性热吸湿应力分析。现有的线性叠加法将吸湿应力与热应力耦合分析,不能适用于聚合物和焊料等非线性材料的问题。通过一个受多步骤湿度/温度加载剖面影响的倒装芯片封装实例,演示了一种完全集成的有限元应力建模方法。吸湿膨胀对层间介质(ILD)和冲击冶金(UBM)结构的影响结果表明,在HAST条件下,总的ILD应力可能是没有水分影响的两倍。这些湿气膨胀引起的拉应力的贡献是非常显著的,导致界面损伤和电故障在HAST期间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Package structural integrity analysis considering moisture
There are three types of failures when an electronic package is exposed to a humidity environment: the popcorn failure at soldering reflow, the delamination and cracking at HAST without electrical bias, and the corrosion under biased HAST. Despite the difference in failure mechanisms, the common and most contributory factor to moisture induced failures is the degradation of adhesion strength in the presence of moisture. Therefore, understanding interface behavior with moisture becomes a key for package integrity and reliability analysis. In this paper, first, several methods to characterize the interfacial fracture toughness or adhesion strength at elevated temperature with moisture effect are presented. The interfaces between polyimide on silicon chip and underfill (PI/UF) are used as a carrier to investigate the influence of moisture. Both interface fracture mechanics based fracture toughness measurement techniques and the quick-turn method such as die shear test are applied to investigate the interface behaviors with moisture. Details of several sample preparation methods, by which the fracture can be made to stay along the desired interface, are illustrated. Key results on the influence of the moisture on fracture toughness are presented. Next, the hygroscopic swelling characterization techniques are reviewed. Due to the fact that the moisture diffusion is a slow process, specimens used in hygroscopic swelling measurement are often subjected to a non-uniform moisture distribution. This becomes a potential hidden error in obtaining the coefficient of hygroscopic swelling. Analytical solutions have been devised to predict the errors caused by the non-uniform moisture distribution. A simple procedure in obtaining the accurate swelling characteristics is proposed. Both TGA-TMA method and Moire interferometry method are applied to measure the hygroscopic swelling behaviors of several underfills. A very good agreement between these two methods is achieved. Subsequent to hygroscopic swelling characterization, the paper presents a novel method to allow a time-dependent nonlinear finite element analysis for package deformations and stresses induced by hygroscopic as well as thermal mismatches. This has been a challenging problem since commonly used commercial finite element software such as ABAQUS and ANSYS do not explicitly allow the fully coupled nonlinear thermal and hygroscopic stress analysis. The existing linear superposition method, which couples hygroscopic stress with thermal stress analysis, can not apply to the problem with nonlinear materials such as polymers and solder materials. A fully integrated finite element stress modeling methodology is demonstrated through an example of flip chip package subjected to a multi-step humidity/temperature loading profile. The results of the effect of hygroscopic swelling on the inter-layer dielectric (ILD) and under bump metallurgy (UBM) structures reveals that the overall ILD stresses under HAST can be twice as high as those considered without the moisture effect. The contribution of these hygroswelling-induced tensile stress is very significant to lead to the interfacial damage and electrical failures during HAST.
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