铜金属化反应溅射TaN/sub x/层扩散阻挡性能的评价

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854322

J.C. Lin, C.S. Liu, S. Shue, C. Yu, M. Liang

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引用次数: 4

摘要

钽基铜的扩散势垒性能得到了广泛的研究。本研究表明，在200 ~ 500℃的固定温度下退火后，基于晶界扩散的惠普尔分析，可以从铜浓度分布图中提取出Cu在不同TaN/sub x/ (x=0/spl sim/0.62)薄膜中的晶界扩散率。利用晶界扩散系数预测了Cu在固定温度250℃和400℃下在Ta和TaN/sub x/薄膜中的渗透深度(2/spl径向/Dt)。Cu/TaN/sub x/(45 A)/N/sup +/P结二极管漏损、SIMS和XSEM分析结果表明，Whipple模型与实验结果吻合较好。

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The evaluation of the diffusion barrier performance of reactively sputtered TaN/sub x/ layers for copper metallization

Ta-based Cu diffusion barrier properties were widely studied. This work demonstrates that grain boundary diffusivity of Cu diffusion in various TaN/sub x/ (x=0/spl sim/0.62) thin films can be extracted from the copper concentration profile, based on the Whipple analysis of grain boundary diffusion, after annealing the samples at fixed temperatures between 200 and 500/spl deg/C. We used the grain boundary diffusivity to predict the penetration depth (2/spl radic/Dt) of Cu in Ta and TaN/sub x/ films at fixed temperatures 250 and 400/spl deg/C. Cu/TaN/sub x/(45 A)/N/sup +/P junction diode leakage, SIMS and XSEM analysis results indicated that the Whipple model correlates well with experimental results.

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Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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