测定液氦至室温间亚微米mosfet漏极饱和电压的新方法

ICM 2001 Proceedings. The 13th International Conference on Microelectronics. Pub Date : 1900-01-01 DOI:10.1109/ICM.2001.997487

Y. Amhouche, A. El abbassi, K. Rais, R. Rmaily

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引用次数: 1

摘要

提出了一种提取亚微米mosfet漏极饱和电压的新方法。它是基于对撞击电离率的偏导数的测量。该方法已在不同沟道长度的MOSFET器件上进行了测试，并与其他方法进行了比较。

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New method for determination of drain saturation voltage in submicrometer MOSFETs between liquid helium to room temperature

A new method for drain saturation voltage extraction in submicron MOSFETs is presented. It is based on measurements of the partial derivative of the impact ionization rate. The method has been tested using different channel length MOSFET devices and compared with other methods.

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ICM 2001 Proceedings. The 13th International Conference on Microelectronics.

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