晶圆表面轮廓对IC封装的影响

J.C.L. Wu, H. Iksan, T. Huang, J.D. Wu, K. Lo
{"title":"晶圆表面轮廓对IC封装的影响","authors":"J.C.L. Wu, H. Iksan, T. Huang, J.D. Wu, K. Lo","doi":"10.1109/ISAOM.2001.916610","DOIUrl":null,"url":null,"abstract":"In this paper, delamination occurring in a plastic quad flat package (PQFP) had been found after the molding process. From preliminary observation, the wafer surface profile is found to be different from the others by atomic force microscopy (AFM) analysis, e.g. the pitch and trench of the local die surface. A stress simulation was performed to characterize the interaction between the molding compound formula design, molding process and wafer surface topography. The results show that the wafer topography does have a significant impact on the in-situ molding process. Aside from simulation, Fourier transform infrared spectrometry (FTIR) was used to characterize the uniformity of top layer passivation. The result showed that the uniformity of deposited passivation was not quite homogeneous as compared to a well-adhered area, which might cause insufficient adhesion which is contributed to by low density chemical bonding in the interface. Therefore, wafer surface topography and its chemistry do have a significant impact on IC packaging.","PeriodicalId":321904,"journal":{"name":"Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Impact of wafer surface profile on IC packaging\",\"authors\":\"J.C.L. Wu, H. Iksan, T. Huang, J.D. Wu, K. Lo\",\"doi\":\"10.1109/ISAOM.2001.916610\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, delamination occurring in a plastic quad flat package (PQFP) had been found after the molding process. From preliminary observation, the wafer surface profile is found to be different from the others by atomic force microscopy (AFM) analysis, e.g. the pitch and trench of the local die surface. A stress simulation was performed to characterize the interaction between the molding compound formula design, molding process and wafer surface topography. The results show that the wafer topography does have a significant impact on the in-situ molding process. Aside from simulation, Fourier transform infrared spectrometry (FTIR) was used to characterize the uniformity of top layer passivation. The result showed that the uniformity of deposited passivation was not quite homogeneous as compared to a well-adhered area, which might cause insufficient adhesion which is contributed to by low density chemical bonding in the interface. Therefore, wafer surface topography and its chemistry do have a significant impact on IC packaging.\",\"PeriodicalId\":321904,\"journal\":{\"name\":\"Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562)\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-03-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAOM.2001.916610\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces (IEEE Cat. No.01TH8562)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAOM.2001.916610","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

本文研究了塑料四平面封装(PQFP)在成型过程中出现的分层现象。通过初步观察,原子力显微镜(AFM)分析发现晶圆片表面轮廓与其他晶圆片不同,例如局部模具表面的俯角和沟槽。通过应力模拟,表征了成型配方设计、成型工艺和晶圆表面形貌之间的相互作用。结果表明,晶圆形貌对原位成型工艺有显著影响。除模拟外,利用傅里叶变换红外光谱(FTIR)对顶层钝化均匀性进行了表征。结果表明,镀层钝化的均匀性不如良好粘附区域均匀,这可能是由于界面化学键密度低导致的附着力不足。因此,晶圆表面形貌及其化学性质确实对IC封装有重大影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Impact of wafer surface profile on IC packaging
In this paper, delamination occurring in a plastic quad flat package (PQFP) had been found after the molding process. From preliminary observation, the wafer surface profile is found to be different from the others by atomic force microscopy (AFM) analysis, e.g. the pitch and trench of the local die surface. A stress simulation was performed to characterize the interaction between the molding compound formula design, molding process and wafer surface topography. The results show that the wafer topography does have a significant impact on the in-situ molding process. Aside from simulation, Fourier transform infrared spectrometry (FTIR) was used to characterize the uniformity of top layer passivation. The result showed that the uniformity of deposited passivation was not quite homogeneous as compared to a well-adhered area, which might cause insufficient adhesion which is contributed to by low density chemical bonding in the interface. Therefore, wafer surface topography and its chemistry do have a significant impact on IC packaging.
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