基于薄膜结晶度控制的薄膜互连可靠性的提高

2012 14th International Conference on Electronic Materials and Packaging (EMAP) Pub Date : 2012-12-01 DOI:10.1115/IPACK2013-73149

O. Asai, Naokazu Murata, Ken Suzuki, H. Miura

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引用次数: 5

摘要

本研究从晶界结晶度角度研究了电镀铜互连材料电子性能的退化机理。应用电子背散射衍射(EBSD)方法定量评价了互连物的结晶度。结果表明，在不同的电镀种层材料中，相互连接的结晶度变化很大。根据测量结果，提出了一种新的高可靠性电镀铜薄膜互连设计准则。

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Improvement of the reliability of thin-film interconnections based on the control of the crystallinity of the thin films

In this study, the degradation mechanism of electronic performance of electroplated copper interconnections was investigated by considering their crystallinity of grain boundaries. The crystallinity of the interconnections was evaluated quantitatively by applying an EBSD (Electron Back-scattered Diffraction) method. It was found that the crystallinity of the interconnections varied drastically depending on the seed layer material for electroplating. A new design guideline for highly reliable electroplated copper thin film interconnections was proposed based on the measured results.

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2012 14th International Conference on Electronic Materials and Packaging (EMAP)

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