{"title":"用于结隔离型智能电源技术的75v横向IGBT","authors":"B. Bakeroot, J. Doutreloigne, P. Moens","doi":"10.1109/ISPSD.2006.1666106","DOIUrl":null,"url":null,"abstract":"A 75 V, lateral insulated gate bipolar transistor (LIGBT) is demonstrated in a junction-isolated technology. This device is implemented in a standard smart power technology with a 0.35mum CMOS core. The nLIGBT exhibits a fourfold increase in current density compared to a nVDEMOS in the same technology. A double buried layer structure effectively suppresses substrate currents, provides the floating capability (the nLIGBT can be used as a high-side switch), ensures high latching currents, and yields fast switching speeds","PeriodicalId":198443,"journal":{"name":"2006 IEEE International Symposium on Power Semiconductor Devices and IC's","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A 75 V Lateral IGBT for Junction-Isolated Smart Power Technologies\",\"authors\":\"B. Bakeroot, J. Doutreloigne, P. Moens\",\"doi\":\"10.1109/ISPSD.2006.1666106\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 75 V, lateral insulated gate bipolar transistor (LIGBT) is demonstrated in a junction-isolated technology. This device is implemented in a standard smart power technology with a 0.35mum CMOS core. The nLIGBT exhibits a fourfold increase in current density compared to a nVDEMOS in the same technology. A double buried layer structure effectively suppresses substrate currents, provides the floating capability (the nLIGBT can be used as a high-side switch), ensures high latching currents, and yields fast switching speeds\",\"PeriodicalId\":198443,\"journal\":{\"name\":\"2006 IEEE International Symposium on Power Semiconductor Devices and IC's\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Symposium on Power Semiconductor Devices and IC's\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2006.1666106\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Symposium on Power Semiconductor Devices and IC's","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2006.1666106","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
摘要
一个75 V，侧面绝缘栅双极晶体管(light)在结隔离技术演示。该器件采用标准的智能电源技术，具有0.35 μ m CMOS核心。与采用相同技术的nVDEMOS相比，nlight的电流密度增加了四倍。双埋层结构有效地抑制衬底电流，提供浮动能力(nlight可以用作高侧开关)，确保高锁存电流，并产生快速的开关速度
A 75 V Lateral IGBT for Junction-Isolated Smart Power Technologies
A 75 V, lateral insulated gate bipolar transistor (LIGBT) is demonstrated in a junction-isolated technology. This device is implemented in a standard smart power technology with a 0.35mum CMOS core. The nLIGBT exhibits a fourfold increase in current density compared to a nVDEMOS in the same technology. A double buried layer structure effectively suppresses substrate currents, provides the floating capability (the nLIGBT can be used as a high-side switch), ensures high latching currents, and yields fast switching speeds
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