{"title":"结合CBR-MOS栅极结构的迁移率和通道宽度提取","authors":"J. Santander, M. Lozano, C. Cané, E. Lora-Tamayo","doi":"10.1109/ICMTS.1995.513987","DOIUrl":null,"url":null,"abstract":"A new test structure based on a Cross-Bridge-Resistor with the conducting layer made of the channel of a MOS transistor is presented. This structure has been fabricated in a CMOS technology, and the possibilities for extracting the carrier mobility and channel width without parasitic effects are analyzed.","PeriodicalId":432935,"journal":{"name":"Proceedings International Conference on Microelectronic Test Structures","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A combined CBR-MOS gate structure for mobility and channel width extraction\",\"authors\":\"J. Santander, M. Lozano, C. Cané, E. Lora-Tamayo\",\"doi\":\"10.1109/ICMTS.1995.513987\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new test structure based on a Cross-Bridge-Resistor with the conducting layer made of the channel of a MOS transistor is presented. This structure has been fabricated in a CMOS technology, and the possibilities for extracting the carrier mobility and channel width without parasitic effects are analyzed.\",\"PeriodicalId\":432935,\"journal\":{\"name\":\"Proceedings International Conference on Microelectronic Test Structures\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-03-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1995.513987\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1995.513987","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A combined CBR-MOS gate structure for mobility and channel width extraction
A new test structure based on a Cross-Bridge-Resistor with the conducting layer made of the channel of a MOS transistor is presented. This structure has been fabricated in a CMOS technology, and the possibilities for extracting the carrier mobility and channel width without parasitic effects are analyzed.
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