铜互连线的晶粒结构分析及其电迁移可靠性

L. Cao, K. Ganesh, L. Zhang, P. Ferreira, P. Ho
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引用次数: 1

摘要

利用透射电子显微镜(TEM)中最新发展的进动电子衍射(PED)技术表征了45 nm节点铜互连线的晶粒取向和晶界。结果显示:强;和;纹理沿线的宽度和厚度,分别和低比例的相干孪晶界。应用显微组织特征评价了晶粒结构对电迁移可靠性的影响。我们首先提取了(111)、(110)和(100)表面的界面扩散系数,并通过分析在EM测试中观察到的电阻迹提取了平均晶界扩散系数。然后计算与界面相交的晶界三点处的通量散度,以识别潜在的空穴位置。类似的分析扩展到通孔/线区域,以评估狭缝空洞形成的通量散度,并评估电磁早期失效的可能性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Grain structure analysis and implications on electromigration reliability for Cu interconnects
A recently developed precession electron diffraction (PED) technique in transmission electron microscopy (TEM) was employed to characterize the grain orientation and grain boundaries for Cu interconnects of the 45 nm node. The results showed a strong <;111>; and <;110>; textures along the width and the thickness of the line, respectively and a low fraction of coherent twin boundaries. The microstructure characteristics were applied to evaluate the grain structure effect on electromigration (EM) reliability. We first extracted the interfacial diffusivity components for (111), (110), and (100) surfaces and the averaged grain boundary diffusivity by analyzing the resistance traces observed in EM tests. Then the flux divergence at the triple points of grain boundary intersecting the interface was calculated to identify potential voiding sites. Similar analysis was extended to via/line regions to evaluate the flux divergence for slit void formation and to assess the probability of EM early failure.
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