{"title":"采用片上负载电阻的双端口测试结构对铸造双栅场效应管的三端口射频特性进行研究","authors":"U. Lott, W. Baumberger, Urs Gisiger","doi":"10.1109/ICMTS.1995.513966","DOIUrl":null,"url":null,"abstract":"Special test structures for the three-port linear RF characterization of dual-gate FETs using on-chip integrated 50 ohm load resistors for the third port are described. These test structures allow us to characterize dual-gate FETs with a standard two-port network analyzer and only two wafer probes. Measurement results of test FETs realized on a commercial GaAs foundry MESFET process show that good accuracy of the three-port S-parameters is achieved.","PeriodicalId":432935,"journal":{"name":"Proceedings International Conference on Microelectronic Test Structures","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Three-port RF characterization of foundry dual-gate FETs using two-port test structures with on-chip loading resistors\",\"authors\":\"U. Lott, W. Baumberger, Urs Gisiger\",\"doi\":\"10.1109/ICMTS.1995.513966\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Special test structures for the three-port linear RF characterization of dual-gate FETs using on-chip integrated 50 ohm load resistors for the third port are described. These test structures allow us to characterize dual-gate FETs with a standard two-port network analyzer and only two wafer probes. Measurement results of test FETs realized on a commercial GaAs foundry MESFET process show that good accuracy of the three-port S-parameters is achieved.\",\"PeriodicalId\":432935,\"journal\":{\"name\":\"Proceedings International Conference on Microelectronic Test Structures\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-03-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1995.513966\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1995.513966","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Three-port RF characterization of foundry dual-gate FETs using two-port test structures with on-chip loading resistors
Special test structures for the three-port linear RF characterization of dual-gate FETs using on-chip integrated 50 ohm load resistors for the third port are described. These test structures allow us to characterize dual-gate FETs with a standard two-port network analyzer and only two wafer probes. Measurement results of test FETs realized on a commercial GaAs foundry MESFET process show that good accuracy of the three-port S-parameters is achieved.
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