C. L. Yang, C. I. Li, G. Lin, W. Chen, C. Tsai, Y. S. Huang, C. Fu, T. Y. Lu, H. Y. Wang, B. Hsu, C. T. Huang, M. Chan, J. Y. Wu, Y. C. Cheng, O. Cheng, B. Guo, S. Lu, H. Gossmann, B. Colombeau, I. Chen
{"title":"通过低温植入技术优化最先进的28nm核心/SRAM器件性能","authors":"C. L. Yang, C. I. Li, G. Lin, W. Chen, C. Tsai, Y. S. Huang, C. Fu, T. Y. Lu, H. Y. Wang, B. Hsu, C. T. Huang, M. Chan, J. Y. Wu, Y. C. Cheng, O. Cheng, B. Guo, S. Lu, H. Gossmann, B. Colombeau, I. Chen","doi":"10.1109/VLSI-TSA.2012.6210167","DOIUrl":null,"url":null,"abstract":"In this paper, we have demonstrated that cryogenic implantation applied to source and drain (SD) extension, pocket/halo and SD formation offers advantages for higher core and SRAM driving current and one order lower Ioff bulk (Ioffb) leakage in NMOS with reduced SRAM defectivity. Atomistic Kinetic Monte Carlo (KMC) modeling confirms that the cryo-implantation has enabled a unique control of active Boron and point defect distribution in the channel/halo region of NMOS.","PeriodicalId":388574,"journal":{"name":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Optimizing state-of-the-art 28nm core/SRAM device performance by cryo-implantation technology\",\"authors\":\"C. L. Yang, C. I. Li, G. Lin, W. Chen, C. Tsai, Y. S. Huang, C. Fu, T. Y. Lu, H. Y. Wang, B. Hsu, C. T. Huang, M. Chan, J. Y. Wu, Y. C. Cheng, O. Cheng, B. Guo, S. Lu, H. Gossmann, B. Colombeau, I. Chen\",\"doi\":\"10.1109/VLSI-TSA.2012.6210167\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we have demonstrated that cryogenic implantation applied to source and drain (SD) extension, pocket/halo and SD formation offers advantages for higher core and SRAM driving current and one order lower Ioff bulk (Ioffb) leakage in NMOS with reduced SRAM defectivity. Atomistic Kinetic Monte Carlo (KMC) modeling confirms that the cryo-implantation has enabled a unique control of active Boron and point defect distribution in the channel/halo region of NMOS.\",\"PeriodicalId\":388574,\"journal\":{\"name\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Technical Program of 2012 VLSI Technology, System and Application\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI-TSA.2012.6210167\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Technical Program of 2012 VLSI Technology, System and Application","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI-TSA.2012.6210167","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optimizing state-of-the-art 28nm core/SRAM device performance by cryo-implantation technology
In this paper, we have demonstrated that cryogenic implantation applied to source and drain (SD) extension, pocket/halo and SD formation offers advantages for higher core and SRAM driving current and one order lower Ioff bulk (Ioffb) leakage in NMOS with reduced SRAM defectivity. Atomistic Kinetic Monte Carlo (KMC) modeling confirms that the cryo-implantation has enabled a unique control of active Boron and point defect distribution in the channel/halo region of NMOS.
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