电阻性短缺陷的δ - iddq测试

P. Engelke, I. Polian, H. Manhaeve, M. Renovell, B. Becker
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引用次数: 4

摘要

本文讨论了在使用实际短路缺陷模型时IDDQ测试的效率,特别是Delta- IDDQ测试,该模型适当地考虑了短路电阻与其可检测性之间的关系。结果清楚地表明,Delta-IDDQ方法覆盖了传统逻辑测试所遗漏的大量电阻短路,只需要相对较小的向量集。此外,大量的缺陷被证明是无法通过逻辑测试检测到的,但可能会恶化并导致可靠性故障。Delta- IDDQ阈值和设备灵敏度对测试质量至关重要。此外,传统的IDDQ故障模型在考虑电阻性短路缺陷时的有效性有限。例如,使用无故障下一状态函数进行顺序IDDQ故障模拟会导致一些电阻性短缺陷的错误分类。这是第一次对电阻性短缺陷的IDDQ测试进行系统研究。阈值对缺陷覆盖率的影响第一次被量化。虽然模拟结果是基于0.35 μ m的技术,但结果和方法可以转移到最先进的纳米技术
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Delta-IDDQ Testing of Resistive Short Defects
This paper addresses the efficiency of IDDQ and more specifically Delta- IDDQ testing when using a realistic short defect model that properly considers the relation between the resistance of the short and its detectability. The results clearly show that the Delta-IDDQ approach covers a large number of resistive shorts missed by conventional logic testing, requiring only a relatively small vector set. In addition a significant number of defects which are proven to be undetectable by logic testing but may deteriorate and result in reliability failures are detected. The Delta- IDDQ threshold and thus the equipment sensitivity is shown to be critical for the test quality. Furthermore, the validity of the traditional IDDQ fault models when considering resistive short defects is found to be limited. For instance, the use of the fault-free next-state function for sequential IDDQ fault simulation is shown to result in a wrong classification of some resistive short defects. This is the first systematic study of IDDQ testing of resistive short defects. The impact of the threshold on the defect coverage is quantified for the first time. Although the simulation results are based upon a 0.35mum technology, the results and methodology can be transferred to state-of-the-art and NanoTechnologies
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