超薄SOI高压器件的隧道掘进

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI:10.1109/ISPSD.1995.515022

S. Merchant, E. Arnold, M. Simpson

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引用次数: 11

摘要

首次报道了薄SOI高压器件中电子从价带到导带的隧穿现象。结果表明，在600-700 V薄SOI二极管中，理论和实验反漏电流之间存在密切的相关性，包括埋藏氧化物厚度依赖性、衬底偏置依赖性和温度依赖性。通过数值模拟验证了带间隧道的有效性。

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Tunneling in thin SOI high voltage devices

Tunneling of electrons from valence to conduction band in thin SOI high voltage devices is reported for the first time. A close correlation between the theoretical and experimental reverse leakage current in 600-700 V thin SOI diodes is shown, including buried oxide thickness dependence, substrate bias dependence, and temperature dependence. Band-to-band tunneling is also verified with numerical simulation.

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Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95

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