一种采用厚底氧化物的4H-SiC沟槽MOSFET

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694394

H. Takaya, J. Morimoto, K. Hamada, T. Yamamoto, J. Sakakibara, Y. Watanabe, N. Soejima

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引用次数: 27

摘要

开发了一种4H-SiC沟槽MOSFET，其特点是在沟槽底部使用具有厚氧化层的沟槽栅极，以减轻栅极氧化层的电场强度。该器件的最大电场强度和栅极漏极电荷(Qgd)分别比传统的MOSFET低46%和38%。在沟槽下制备了一层较厚的氧化层，厚度为□5mm。该芯片漏源击穿电压(BVdss)为1400V，比导通电阻(Ron.sp)为4.4mΩcm2 (Vg=20V, Vd=2V)。采用宽沟槽终端结构和沟槽分离获得高击穿电压。

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A 4H-SiC trench MOSFET with thick bottom oxide for improving characteristics

A 4H-SiC trench MOSFET has been developed that features the use of trench gates with a thick oxide layer on the bottoms of the trenches for relieving the electric field strength of the gate oxide layer. The maximum electric field strength and gate-drain charge (Qgd) of this device is 46% and 38% lower than that of a conventional MOSFET, respectively. A □5mm chip was fabricated with a thick oxide layer under the trench. The drain-source breakdown voltage (BVdss) of this chip is 1400V and the specific on-resistance (Ron.sp) is 4.4mΩcm2 (Vg=20V, Vd=2V). A high breakdown voltage is obtained by a wide trench terminal structure and trench separation.

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来源期刊

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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