表面活化键合制备Si/ITO/Si结的导电性能

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI:10.23919/LTB-3D.2017.7947447

Jianbo Liang, T. Ogawa, K. Araki, T. Kamioka, N. Shigekawa

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引用次数: 2

摘要

研究了表面活化键合(SAB)制备的n-Si/ITO/n-Si、n-Si/ITO/p-Si和p-Si/ITO/n-Si结的电学性能。n-Si/ITO/n-Si、n-Si/ITO/p-Si和p-Si/ITO/n-Si结的电流-电压(I-V)特性表现出良好的线性特性。n-Si/ITO/p-Si结的界面电阻为0.0249 O·cm2，是所有样品中观察到的最小值。

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Electrical conduction of Si/ITO/Si junctions fabricated by surface activated bonding

The electrical properties of n-Si/ITO/n-Si, n-Si/ITO/p-Si, and p-Si/ITO/n-Si junctions fabricated by surface activated bonding (SAB) were investigated. The current-voltage (I-V) characteristics of n-Si/ITO/n-Si, n-Si/ITO/p-Si, and p-Si/ITO/n-Si junctions showed excellent linearity. The interface resistance of n-Si/ITO/p-Si junctions was found to be 0.0249 O·cm2, which is the smallest value observed in all the samples.

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2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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