采用三种互连技术的高速缓存系统的性能建模:氰酸酯PCB,片上芯片和Cu/PI MCM

J. Shiao, D. Nguyen
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引用次数: 13

摘要

为了了解不同互连技术的权衡,并研究MCM(多芯片模块)技术在高性能计算机产品中的适用性,对使用三种互连技术的缓存系统进行了电气性能建模研究。这三种技术分别是高密度氰酸酯PCB;chip-on-board;铜/聚酰亚胺MCM与高密度连接器。使用三种互连技术,完成了缓存系统的放置和布局。开发了主动缓冲模型和互连模型。给出了性能建模结果,包括互连、输入/输出缓冲区、关键路径延迟和信号完整性评估
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Performance modeling of a cache system with three interconnect technologies: cyanate ester PCB, chip-on-board and Cu/PI MCM
To understand the tradeoffs in different interconnect technologies, and to investigate the applicability of MCM (multi-chip module) technology to high performance computer products, an electrical performance modeling study on a cache system using three interconnect technologies was conducted. The three technologies were a high density cyanate ester PCB; chip-on-board; and a copper/polyimide MCM with high-density connectors. Placements and layouts for the cache system, using three interconnect technologies, have been done. Active buffer models and interconnect models have been developed. The performance modeling results, including the interconnect, input/output buffers, critical path delays, and the signal integrity assessment, are presented.<>
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