暴露于电离辐射时基于sram的FPGA的I/O块可靠性

2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI:10.1109/SMICND.2018.8539743

V. Placinta, L. N. Cojocariu, C. Ravariu

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引用次数: 2

摘要

在本文中，我们使用基于环振荡器的测量技术，对基于sram的现场可编程门阵列(FPGA)的输入/输出块中的辐射诱导故障进行了调查。这项研究是在Xilinx的KINTEX-7 FPGA上进行的，同时暴露在离子和x射线束下。确定了两种类型的故障，振幅和占空比故障，估计振幅故障的横截面值约为0.6·10−5cm2/设备，其他故障的横截面值约为1.6·10−5cm2/设备。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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I/O Blocks Reliability for an SRAM-Based FPGA When Exposed to Ionizing Radiation

In this paper we present a survey of radiation induced failures in the Input/Output blocks of an SRAM-based Field Programmable Gate Array (FPGA), using a ring oscillator-based measurement technique. This study has been done on Xilinx's KINTEX-7 FPGA, while exposed to ion and X-rays beams. Two types of failures have been identified, amplitude and duty cycle failures, and the cross-section values were estimated to be approximately 0.6 · 10⁻⁵cm²/device for the amplitude failures and 1.6 · 10⁻⁵cm²/device for the other ones.

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2018 International Semiconductor Conference (CAS)

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