包含可变电阻效应的非晶硅薄膜晶体管模型

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Pub Date : 1996-09-02 DOI:10.1109/SISPAD.1996.865329

M. Tanizawa, S. Kikuta, N. Nakagawa, K. Ishikawa, N. Kotani, H. Miyoshi

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引用次数: 1

摘要

提出了一种新的含可变串联电阻的A - si:TFT漏极电流解析模型。该模型的计算结果与实验结果在所有工作偏置条件下都有很好的一致性，并表明了该模型在不同器件几何形状下的可扩展性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An amorphous-silicon thin-film transistor model including variable resistance effect

A new analytical drain current model including variable series resistance for the a-Si:TFT is presented. Results calculated by the model show very good agreement with experimental results for all operating bias conditions and indicate the scalability over different device geometries.

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来源期刊

1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095)

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