具有完全ph响应HFO2的Finfet作为高度稳定的生化传感器

2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS) Pub Date : 2014-03-13 DOI:10.1109/MEMSYS.2014.6765828

S. Rigante, M. Wipf, A. Bazigos, K. Bedner, D. Bouvet, A. Ionescu

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引用次数: 3

摘要

在这项工作中，高尺度finfet(鳍场效应晶体管)被提议作为芯片上实验室平台的传感和电路单元。具有HfO2栅极氧化物的基于finfet的传感器具有ΔVth≈56 mV/pH的完整pH响应。该器件具有优良的电子性能，即SS = 77 mV/dec, Ion/Ioff =1.5×106，从而实现了高的读出灵敏度(south = ΔId/Id≈43%)。在4.5天内证明了高长期稳定性，时间限制漂移为0.14 mV/h。

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Finfet with fully PH-responsive HFO2 as highly stable biochemical sensor

In this work, highly scaled FinFETs (Fin Field Effect Transistors) are proposed as both sensing and circuit units of a lab-on-a-chip platform. The FinFET-based sensors with an HfO₂ gate oxide demonstrate full pH-response with ΔV_th ≈ 56 mV/pH. High readout sensitivity S_out = ΔI_d/I_d ≈ 43% is achieved in combination with excellent device electronic properties, i.e. SS = 77 mV/dec and I_on/I_off =1.5×10⁶. High long-term stability is proven over 4.5 days with a drift in time limited at 0.14 mV/h.

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2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS)

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