SONOS快闪记忆体中不同隧道氧化物的电学特性及可靠性比较

2006 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT'06) Pub Date : 2006-08-02 DOI:10.1109/MTDT.2006.8

Jia-Lin Wu, Hua-Ching Chien, Chien-Wei Liao, Cheng-Yen Wu, Chih-Yuan Lee, Houng-Chi Wei, Shi-Hsien Chen, H. Hwang, S. Pittikoun, Travis Cho, C. Kao

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引用次数: 6

摘要

研究了具有不同隧道氧化物的多晶硅-氮氧化物-硅(SONOS)器件的特性。高温氧化物(HTO)加NO退火制备的隧道氧化物(HTO (NO*))在操作窗口、滞留性和耐久性方面均优于单纯高温氧化物(HTO)和原位蒸汽生成氧化物(ISSG)制备的隧道氧化物。此外，还观察了电荷击穿的性质。该研究可为未来闪存的应用提供一种简单的可靠性方法

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Comparison of electrical and reliability characteristics of different tunnel oxides in SONOS flash memory

The characteristics of polysilicon-oxide-nitride-oxide-silicon (SONOS) devices with different tunnel oxides are studied. The tunnel oxide fabricated by high-temperature oxide (HTO) with additional NO annealing treatment (HTO (NO*)) has better performance than that fabricated by HTO only and in-situ steam generated oxide (ISSG) including operation window, retention, and endurance. Besides, the properties of charge-to-breakdown are also observed. The study can provide a straightforward way of reliability for future flash memory application

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来源期刊

2006 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT'06)

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