{"title":"用于便携式无线电应用的1.2 V操作1.1 W异质结FET","authors":"K. Inosako, N. Iwata, M. Kuzuhara","doi":"10.1109/IEDM.1995.497210","DOIUrl":null,"url":null,"abstract":"This paper describes 1.2 V operated power performance of a double-doped AlGaAs-InGaAs-AlGaAs heterojunction FET (HJFET) at 950 MHz. A 28 mm gate periphery HJFET delivered a saturated output power of 1.1 W for maximum output power tuning and a maximum power-added efficiency of 63% for maximum efficiency tuning. These results significantly advance the state-of-the-art of low voltage operation power devices for portable radio applications.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"1.2 V operation 1.1 W heterojunction FET for portable radio applications\",\"authors\":\"K. Inosako, N. Iwata, M. Kuzuhara\",\"doi\":\"10.1109/IEDM.1995.497210\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes 1.2 V operated power performance of a double-doped AlGaAs-InGaAs-AlGaAs heterojunction FET (HJFET) at 950 MHz. A 28 mm gate periphery HJFET delivered a saturated output power of 1.1 W for maximum output power tuning and a maximum power-added efficiency of 63% for maximum efficiency tuning. These results significantly advance the state-of-the-art of low voltage operation power devices for portable radio applications.\",\"PeriodicalId\":137564,\"journal\":{\"name\":\"Proceedings of International Electron Devices Meeting\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1995.497210\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1995.497210","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
1.2 V operation 1.1 W heterojunction FET for portable radio applications
This paper describes 1.2 V operated power performance of a double-doped AlGaAs-InGaAs-AlGaAs heterojunction FET (HJFET) at 950 MHz. A 28 mm gate periphery HJFET delivered a saturated output power of 1.1 W for maximum output power tuning and a maximum power-added efficiency of 63% for maximum efficiency tuning. These results significantly advance the state-of-the-art of low voltage operation power devices for portable radio applications.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
