{"title":"Sige HBTs的混合模损伤谱","authors":"P. Cheng, Chendong Zhu, J. Cressler, A. Joseph","doi":"10.1109/RELPHY.2007.369953","DOIUrl":null,"url":null,"abstract":"We present a new mixed-mode stress technique for assessing the complete mixed-mode damage spectrum of SiGe HBTs, and apply it to three SiGe technology generations. We are able to distinguish four distinct regions of cross-generational SiGe HBT stress-response, identify a new low-current density damage mechanism in 3rd generation devices, and observe for the first time a novel stress-induced annealing phenomenon. The implications of these observations are addressed.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Themixed-Mode Damage Spectrum of Sige HBTs\",\"authors\":\"P. Cheng, Chendong Zhu, J. Cressler, A. Joseph\",\"doi\":\"10.1109/RELPHY.2007.369953\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a new mixed-mode stress technique for assessing the complete mixed-mode damage spectrum of SiGe HBTs, and apply it to three SiGe technology generations. We are able to distinguish four distinct regions of cross-generational SiGe HBT stress-response, identify a new low-current density damage mechanism in 3rd generation devices, and observe for the first time a novel stress-induced annealing phenomenon. The implications of these observations are addressed.\",\"PeriodicalId\":433104,\"journal\":{\"name\":\"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual\",\"volume\":\"76 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2007.369953\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2007.369953","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We present a new mixed-mode stress technique for assessing the complete mixed-mode damage spectrum of SiGe HBTs, and apply it to three SiGe technology generations. We are able to distinguish four distinct regions of cross-generational SiGe HBT stress-response, identify a new low-current density damage mechanism in 3rd generation devices, and observe for the first time a novel stress-induced annealing phenomenon. The implications of these observations are addressed.
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