Manho Lee, Heegon Kim, Sukjin Kim, Joungho Kim, Jonghyun Cho, C. Yoon, B. Achkir, Jingook Kim, J. Fan
{"title":"片上线性稳压模块的设计及高速输出缓冲器配电网噪声波动的测量","authors":"Manho Lee, Heegon Kim, Sukjin Kim, Joungho Kim, Jonghyun Cho, C. Yoon, B. Achkir, Jingook Kim, J. Fan","doi":"10.1109/EDAPS.2016.7874396","DOIUrl":null,"url":null,"abstract":"By applying on-chip linear VRM, PDN inductance is greatly decreased and PDN resonance peak disappears, which is usually generated by PCB/PKG inductance and on-chip capacitance. To confirm, we design an application circuits which have on-chip linear voltage regulator module (VRM) with aggressor and victim buffer. We validate the advantages of on-chip linear VRM by measuring fabricated chip in this research. Moreover, we show PDN self-impedance at output buffer by simulation with designed PCB's S-parameter, and eye-diagram power fluctuation up to 1 Gbps.","PeriodicalId":130864,"journal":{"name":"2015 IEEE 24th Electrical Performance of Electronic Packaging and Systems (EPEPS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Design of on-chip linear voltage regulator module and measurement of power distribution network noise fluctuation at high-speed output buffer\",\"authors\":\"Manho Lee, Heegon Kim, Sukjin Kim, Joungho Kim, Jonghyun Cho, C. Yoon, B. Achkir, Jingook Kim, J. Fan\",\"doi\":\"10.1109/EDAPS.2016.7874396\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By applying on-chip linear VRM, PDN inductance is greatly decreased and PDN resonance peak disappears, which is usually generated by PCB/PKG inductance and on-chip capacitance. To confirm, we design an application circuits which have on-chip linear voltage regulator module (VRM) with aggressor and victim buffer. We validate the advantages of on-chip linear VRM by measuring fabricated chip in this research. Moreover, we show PDN self-impedance at output buffer by simulation with designed PCB's S-parameter, and eye-diagram power fluctuation up to 1 Gbps.\",\"PeriodicalId\":130864,\"journal\":{\"name\":\"2015 IEEE 24th Electrical Performance of Electronic Packaging and Systems (EPEPS)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 24th Electrical Performance of Electronic Packaging and Systems (EPEPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDAPS.2016.7874396\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 24th Electrical Performance of Electronic Packaging and Systems (EPEPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDAPS.2016.7874396","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of on-chip linear voltage regulator module and measurement of power distribution network noise fluctuation at high-speed output buffer
By applying on-chip linear VRM, PDN inductance is greatly decreased and PDN resonance peak disappears, which is usually generated by PCB/PKG inductance and on-chip capacitance. To confirm, we design an application circuits which have on-chip linear voltage regulator module (VRM) with aggressor and victim buffer. We validate the advantages of on-chip linear VRM by measuring fabricated chip in this research. Moreover, we show PDN self-impedance at output buffer by simulation with designed PCB's S-parameter, and eye-diagram power fluctuation up to 1 Gbps.