Flash Memory路线图

2006 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT'06) Pub Date : 2006-08-02 DOI:10.1109/MTDT.2006.27

R. Shirota

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引用次数: 0

摘要

从开发NAND闪存开始使用0.7到现在已经19年了。1987年的M规则。规模化的速度非常快，新一代产品的周期不到2年。现在，NAND闪存的设计规则已经小于70纳米。有一些问题会干扰存储单元的缩放。本讲座将介绍克服这些问题的基本思路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Roadmap of the Flash Memory

It has become 19 years, since the development of the NAND Flash started using 0.7..m rule in 1987. The speed of the scaling has been very fast and the period of the product of the new generation is less than 2 years. Now, design rule of the NAND Flash memory has become less than 70nm. There are some problems to interfere with the scaling of the memory cell. Basic idea to overcome these problems will be introduced in this talk.

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2006 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT'06)

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