一种新型高压二极管，在恢复过程中具有无振荡功能

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856818

K. Satoh, K. Morishita, Y. Yamaguchi, N. Hirano, H. Iwamoto, A. Kawakami

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引用次数: 32

摘要

目前已经实现了工作电压高于4.5 kV左右的GCT (Gate Commutated关断)晶闸管和IGBT等高性能开关器件。然而，作为一种需要对开关器件的导通性能实现合适的恢复性能的随心所欲的二极管，它们在逆变器系统的导通操作中受到了限制。因此，为了提高系统的性能，需要具有高工作电压和软恢复性能的先进二极管。

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A newly structured high voltage diode highlighting oscillation free function in recovery process

At present, switching devices with high performance such as GCT (Gate Commutated Turn-off) thyristor and IGBT which had higher operation voltage than about 4.5 kV have been realized. However, as a freewheeling diode which should realize the suitable recovery performance to the turn-on performance of those switching devices is not successful, they were restricted in the turn-on operation for inverter systems. Therefore, advanced diodes with high operation voltage and soft recovery performance are desired in order to improve the system performance.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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