Ag-Au-Pd合金丝的热超声球键合行为

Santosh Kumar, Hoontae Kwon, Young I. L. Heo, S. H. Kim, J. Hwang, J. Moon
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引用次数: 5

摘要

热声线键合是一种众所周知的过程,它结合热、超声能量和力来粘合小导线,以完成从微芯片上的金属化表面到电路衬底上的另一个金属化表面的电路径,并通过原子扩散过程进行键合。目前工业中使用的键合线材料主要是金(Au),最近低成本铜(Cu)和钯涂层线(PdCu)的使用显著增加。然而,由于Au价格的上涨以及对Cu和PdCu线可靠性的担忧,导致人们寻找替代键合线材料,其中银(Ag)或银合金线(Ag合金)已成为首选。Cu和PdCu线由于其固有的硬度值而对焊盘和底层结构产生较大的应力。Ag具有与Au相似的机械性能,但与Au相比,它更便宜,具有更高的导热性和导电性。与Cu相比,Ag的导电性相似,但在机械性能方面更软。纯银键合线存在自由空气球(FAB)形状不稳定、可靠性差等问题。为了克服这些问题,开发了合金银丝(Ag- au - pd),并对其FAB形成、粘合性和可靠性进行了研究。采用BGA型封装,衬垫成分为Al-1%Si-0.5%Cu。使用氮气作为环境气体时,银合金丝具有良好而稳定的粘合能力。粘接球和粘接棒均表现出良好的粘接完整性。可靠性通过高温储存寿命试验(HTSL)来确定。采用扫描电子显微镜(SEM)和能谱仪(EDS)对金属间化合物(IMC)在可靠性试验中的生长行为进行了表征。观察到Ag2Al和Ag3Al两种类型的IMCs。在150℃下进行1000小时的html测试后,未观察到大块IMC或金属-IMC界面的破坏或空洞。此外,这些IMCs是批量制造的,并且对其电阻率和热膨胀系数(CTE)特性进行了表征,以了解Ag-Al键失效的可能原因。Ag3Al的CTE低于ag2al,这可能是由于前者在较高温度下晶格常数的拉伸较小。Al和Ag2Al之间的界面可能是裂纹产生和破坏的来源,因为它们之间的CTE差异很大。发现Ag3Al相的电阻率略高于Ag2Al相。Ag-Al IMCs的性质信息对于基于第一性原理的有限元和量子力学计算以及最终预测其在现实生活中的行为具有重要意义。根据结合球形、可工作性和结合性测试,银合金丝的地板寿命至少为10周,并且随着时间的推移,拉拔强度和结合球形没有明显的下降。银合金线键合作为微电子封装的一种选择,具有成为一种新兴技术的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermosonic ball bonding behavior of Ag-Au-Pd alloy wire
Thermosonic wire bonding is a well-known process which combines heat, ultrasonic energy and force to bond small wires to complete an electrical path from a metalized surface on a microchip to another metalized surface on the substrate of the circuit and the bonding occurs through the process of atomic diffusion. The bonding wire materials presently used in the industries are primarily gold (Au) and recently the use of low cost copper (Cu) and palladium coated wire (PdCu) have increased significantly. However, due to the increasing price of Au and reliability concerns with the Cu and PdCu wire has led to the search of alternative bonding wire materials in which silver (Ag) or silver alloy wire (Ag alloy) has emerged as the preferred choice. Cu and PdCu wire induces a higher stress on the bond pad and underlying structure due to its inherent hardness value. Ag has similar mechanical properties as Au while it's cheaper and has higher thermal and electrical conductivity as compared to Au. When compared to Cu, Ag is similar in conductivity, but softer in terms of mechanical properties. The pure Ag bonding wire has some issues such as unstable free air ball (FAB) shape and poor reliability. To overcome these issues, alloyed Ag wire (Ag-Au-Pd) was developed and their FAB formation, bondability and reliability were studied. The package used is BGA type and the pad composition is Al-1%Si-0.5%Cu. Ag alloy wire delivers good and stable bonding capability using nitrogen as ambient gas. Both the bonded ball and stich bonding show good bond integrity. The reliability is determined by the high temperature storage life test (HTSL) test. Intermetallic compound (IMC) growth behavior during reliability test is characterized by the scanning electron microscopy (SEM) and energy dispersive spectrometer analyses (EDS). Two types of IMCs Ag2Al and Ag3Al were observed. No failure or voids are observed in the bulk IMC or metal-IMC interface after the HTSL test at 150C for 1000 hrs. Additionally these IMCs are fabricated in bulk and their resistivity and co-efficient of thermal expansion (CTE) properties are characterized to understand the likely source of failure of the Ag-Al bond. The CTE of the Ag3Al is lower than the Ag2Alwhich could be attributed to the lower stretching of lattice constant of former at higher temperature. The interface between the Al and Ag2Al is likely source of crack generation and failure because of the high CTE difference between them. The resistivity of the Ag3Al phase was found to slightly higher than Ag2Al. The information regarding the properties of Ag-Al IMCs are important for the finite element and quantum mechanics based first principle calculation and to ultimately predict their behavior in real life situation. The Ag alloy wire show floor life time of minimum 10 weeks based on bonded ball shape, workability and bondability test and there is no visible appreciable degradation of pull strength and bonded ball shape overtime. Ag alloy wire bonding has the potential to become an emerging technology as an option in microelectronic packaging.
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