通过基于理解的堆栈工程实现工作电流低于 500nA 的超低高性能 TiN\Al2O3\HfO2\Hf\TiN 双极 RRAM

2012 Symposium on VLSI Technology (VLSIT) Pub Date : 2012-06-12 DOI:10.1109/VLSIT.2012.6242510

L. Goux, A. Fantini, G. Kar, Y. Chen, N. Jossart, R. Degraeve, S. Clima, B. Govoreanu, G. Lorenzo, G. Pourtois, D. Wouters, J. Kittl, L. Altimime, M. Jurczak

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引用次数: 78

摘要

我们通过在TiN\HfO2\Hf\TiN RRAM电池中插入薄Al2O3层，实现了低于500na的开关和可调的设置电压。堆栈工程显然导致了对切换现象学的新见解:(i) o清除是形成过程和堆栈不对称管理的关键;(ii)电介质堆减薄可以降低形成电流;(3)“自然”(不对称感应)复位开关发生在靠近TiN阳极的地方;(iv)复位电阻受TiN界面处材料势垒特性的限制。

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Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering

We demonstrate sub-500nA switching and tunable set voltage by inserting thin Al2O3 layer in TiN\HfO2\Hf\TiN RRAM cell. Stack engineering clearly led to novel insights into the switching phenomenology: (i) O-scavenging is key in the forming process and stack-asymmetry management; (ii) dielectric-stack thinning allows lower forming current; (iii) `natural' (asymmetry-induced) reset switching takes place close to the TiN anode; (iv) reset resistance is limited by material-barrier properties at TiN interface.

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2012 Symposium on VLSI Technology (VLSIT)

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