M. Thomas, A. Farcy, E. Deloffre, M. Gros-Jean, C. Perrot, D. Benoit, C. Richard, P. Caubet, S. Guillaumet, R. Pantel, B. Chenevier, J. Torres
{"title":"TaN/Ta铜阻挡层对全PEALD TiN/Ta2O5/TiN 3D damascene MIM电容器性能的影响","authors":"M. Thomas, A. Farcy, E. Deloffre, M. Gros-Jean, C. Perrot, D. Benoit, C. Richard, P. Caubet, S. Guillaumet, R. Pantel, B. Chenevier, J. Torres","doi":"10.1109/IITC.2007.382377","DOIUrl":null,"url":null,"abstract":"MIM capacitors are widely integrated for RF and analog applications. A high density full PEALD TiN/Ta2O5/TiN capacitor is integrated among copper interconnect following an innovative 3D damascene architecture. The impact of a TaN/Ta layer, introduced to avoid Cu diffusion, on both TiN electrode properties and integrated MIM stack performance is studied. Unexpected lower current was obtained without the barrier layer. As a result, up to 17 fF/mum2 capacitance densities were achieved with breakdown voltage over 15 V and excellent voltage linearity.","PeriodicalId":403602,"journal":{"name":"2007 IEEE International Interconnect Technology Conferencee","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Impact of TaN/Ta copper barrier on full PEALD TiN/Ta2O5/TiN 3D damascene MIM capacitor performance\",\"authors\":\"M. Thomas, A. Farcy, E. Deloffre, M. Gros-Jean, C. Perrot, D. Benoit, C. Richard, P. Caubet, S. Guillaumet, R. Pantel, B. Chenevier, J. Torres\",\"doi\":\"10.1109/IITC.2007.382377\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"MIM capacitors are widely integrated for RF and analog applications. A high density full PEALD TiN/Ta2O5/TiN capacitor is integrated among copper interconnect following an innovative 3D damascene architecture. The impact of a TaN/Ta layer, introduced to avoid Cu diffusion, on both TiN electrode properties and integrated MIM stack performance is studied. Unexpected lower current was obtained without the barrier layer. As a result, up to 17 fF/mum2 capacitance densities were achieved with breakdown voltage over 15 V and excellent voltage linearity.\",\"PeriodicalId\":403602,\"journal\":{\"name\":\"2007 IEEE International Interconnect Technology Conferencee\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE International Interconnect Technology Conferencee\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2007.382377\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE International Interconnect Technology Conferencee","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2007.382377","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Impact of TaN/Ta copper barrier on full PEALD TiN/Ta2O5/TiN 3D damascene MIM capacitor performance
MIM capacitors are widely integrated for RF and analog applications. A high density full PEALD TiN/Ta2O5/TiN capacitor is integrated among copper interconnect following an innovative 3D damascene architecture. The impact of a TaN/Ta layer, introduced to avoid Cu diffusion, on both TiN electrode properties and integrated MIM stack performance is studied. Unexpected lower current was obtained without the barrier layer. As a result, up to 17 fF/mum2 capacitance densities were achieved with breakdown voltage over 15 V and excellent voltage linearity.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
