用于高频模拟应用的网格阵列MOSFET (MA-MOS)

1997 Symposium on VLSI Technology Pub Date : 1997-06-10 DOI:10.1109/VLSIT.1997.623701

Shimomura, Matsuzawa, Kimura, Hayashi, Hirai, Kanda

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引用次数: 11

摘要

提出了一种具有环形栅电极的0.3 pm网状maet (MA-MOS)用于高频模拟应用。MA-MOS采用非水化物0.25pm CMOS技术，在2 GHz时实现0.6 dB的低噪声系数(NFmin)和37 GHz的最高振荡频率(finax)。进一步讨论了MA-MOS对高频性能的寄生效应。

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A mesh-arrayed MOSFET (MA-MOS) for high-frequency analog applications

A 0.3 pm Mesh-mayed MaFET(MA-MOS) with ringshaped gate electrode is proposed for high-frequency analog applications. The MA-MOS achieves low noise figure (NFmin) of 0.6 dB at 2 GHz and high maximum oscillation frequency (finax) of 37 GHz, using non-salicide 0.25pm CMOS technology. The parasitic effects of MA-MOS for high frequency performance are farther discussed.

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1997 Symposium on VLSI Technology

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