扇形圆片级封装中介质材料的热力学和粘弹性

Y. Andriani, Xiaobai Wang, Songlin Liu, Zhaohui Chen, Xiaowu Zhang
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引用次数: 5

摘要

扇出晶圆级封装(FOWLP)由于具有成本效益、高性能、高I/O密度、高集成能力、小尺寸和广泛的应用范围而获得了极大的兴趣。FOWLP目前被视为最适合高要求的移动和无线市场,并且对其他专注于高性能和小尺寸的市场具有吸引力。然而,到目前为止,晶圆翘曲仍然是该领域尚未解决的挑战之一。作为电子封装的一个组成部分,介电材料也可能导致整体翘曲。尽管如此,这种贡献有时被排除在理论翘曲计算之外。即使将介电材料纳入有限元模型中,模拟结果仍不能与实际实验结果相吻合。模拟结果与实验结果之间的差异可能是由于模拟中只考虑了聚合物介电材料的弹性特性,而没有考虑粘弹性特性。本文报道了三种用于FOWLP的商用介电材料的热力学和粘弹性性能,并利用时间-温度叠加原理构建了主曲线来研究介电材料的弛豫行为。这些结果可以支持正在进行的用于预测和控制FOWLP晶圆翘曲的精确建模系统的开发。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermomechanical and Viscoelastic Properties of Dielectric Materials Used in Fan-Out Wafer-Level Packaging
The fan-out wafer-level packaging (FOWLP) has gained significant interests owing to the cost effectiveness, high performance, high I/O density, high integration capability, small form factor and diverse range of applications. FOWLP is currently seen as the best fit for the highly demanding mobile and wireless market, and is attractive for other markets focusing on high performance and small size. However, up to date, wafer warpage is still one of the unresolved challenges in this field. As an integral component of the electronic packaging, dielectric materials could also contribute to the overall warpage. Nonetheless, this contribution is sometimes excluded from the theoretical warpage calculation. Even when the dielectric material was included in the finite element modeling, the simulation results have not been able to duplicate the actual experimental results yet. The difference between the modeling and the experimental results could be due to the only incorporation of elastic properties of the polymer dielectric materials in the simulation, instead of the viscoelastic behavior. Here, we reported the thermomechanical, and viscoelastic properties of three commercial dielectric materials that have been used in the FOWLP and construct master curves via the time-temperature superposition principle to study the relaxation behaviors of the dielectric materials. These results could support the ongoing development of an accurate modeling system for prediction and control of wafer warpage in the FOWLP.
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