利用热载子效应快速降解WSi自对准栅极GaAs MESFET

30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI:10.1109/RELPHY.1992.187636

A. Watanabe, K. Fujimoto, M. Oda, T. Nakatsuka, A. Tamura

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引用次数: 25

摘要

研究了热载流子对砷化镓自对准栅极mesfet (sagfet)的快速降解。发现降解速率取决于GaAs表面钝化膜的类型。结果表明，与SiO/sub - 2/钝化的sagfet相比，SiO/sub - 2钝化的sagfet具有更高的抗降解能力。结果表明，在任何模型中，都必须考虑砷化镓表面与钝化膜之间的界面。

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Rapid degradation of WSi self-aligned gate GaAs MESFET by hot carrier effect

Rapid degradation of GaAs self-aligned gate MESFETs (SAGFETs) by hot carriers was observed. The degradation rate was found to depend on the type of passivation film on the GaAs surface. SAGFETs with SiN passivation were found to have higher resistance to degradation than SAGFETs with SiO/sub 2/ passivation. The results suggest that the interface between the GaAs surface and the passivation film must be considered in any model for the degradation mechanism.<>

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30th Annual Proceedings Reliability Physics 1992

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