源侧注入速度为2.7×107 cm/s的锑化NMOSFET，适用于低功耗高性能逻辑应用

2012 Symposium on VLSI Technology (VLSIT) Pub Date : 2012-06-12 DOI:10.1109/VLSIT.2012.6242521

A. Ali, H. Madan, M. Barth, M. Hollander, J. B. Boos, B. R. Bennett, S. Datta

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引用次数: 6

摘要

锑(Sb)量子阱(QW) mosfet具有集成的高κ介电体(1nmAl2O3-10nm HfO2)。长通道Sb NMOS在高场(2 × 1012 /cm2的电荷密度(Ns))下的有效电子迁移率为6000 cm2/Vs，这是所有III-V型MOSFET中报道的最高值。短通道Sb NMOSFET (LG = 150nm)的截止频率(fT)为120GHz, fT - LG积为18GHz。μm，源侧注入速度(veff)为2.7×107 cm/s，漏极偏压(VDS)为0.75V，栅极超速为0.6V。在相似的LG下，测量到的fT和fT × LG比Si NMOS (1.0-1.2V VDD)高2倍，veff比Si NMOS (1.0-1.2V VDD)高4倍，并且是任何III-V MOSFET中最高的。

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Antimonide NMOSFET with source side injection velocity of 2.7×107 cm/s for low power high performance logic applications

Antimonide (Sb) quantum well (QW) MOSFETs are demonstrated with integrated high-κ dielectric (1nmAl₂O₃-10nm HfO₂). The long channel Sb NMOS exhibits effective electron mobility of 6,000 cm²/Vs at high field (2 × 10¹² /cm² of charge density (N_s)), which is the highest reported value for any III-V MOSFET. The short channel Sb NMOSFET (L_G = 150nm) exhibits a cut-off frequency (f_T) of 120GHz, f_T - L_G product of 18GHz.μm and source side injection velocity (v_eff) of 2.7×10⁷ cm/s, at drain bias (V_DS) of 0.75V and gate overdrive of 0.6V. The measured f_T and f_T × L_G are 2 x higher, and v_eff is 4× higher than Si NMOS (1.0-1.2V V_DD) at similar L_G, and are the highest for any III-V MOSFET.

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2012 Symposium on VLSI Technology (VLSIT)

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