R. Jeyasingh, Marissa Caldwell, D. Milliron, H. Wong
{"title":"采用溶液处理的GeTe纳米颗粒的相变存储器件的首次演示","authors":"R. Jeyasingh, Marissa Caldwell, D. Milliron, H. Wong","doi":"10.1109/ESSDERC.2011.6044225","DOIUrl":null,"url":null,"abstract":"We present the first demonstration of a functional Phase Change Memory (PCM) device fabricated using solution processed GeTe phase change nanoparticle. The device shows the characteristic memory behavior of crystallization and threshold switching. The cycling endurance of the device is up to 100 cycles. The cells are currently the best performing solution processed phase change material based memory devices reported so far.","PeriodicalId":161896,"journal":{"name":"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"122 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"First demonstration of phase change memory device using solution processed GeTe nanoparticles\",\"authors\":\"R. Jeyasingh, Marissa Caldwell, D. Milliron, H. Wong\",\"doi\":\"10.1109/ESSDERC.2011.6044225\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present the first demonstration of a functional Phase Change Memory (PCM) device fabricated using solution processed GeTe phase change nanoparticle. The device shows the characteristic memory behavior of crystallization and threshold switching. The cycling endurance of the device is up to 100 cycles. The cells are currently the best performing solution processed phase change material based memory devices reported so far.\",\"PeriodicalId\":161896,\"journal\":{\"name\":\"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)\",\"volume\":\"122 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.2011.6044225\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2011.6044225","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
First demonstration of phase change memory device using solution processed GeTe nanoparticles
We present the first demonstration of a functional Phase Change Memory (PCM) device fabricated using solution processed GeTe phase change nanoparticle. The device shows the characteristic memory behavior of crystallization and threshold switching. The cycling endurance of the device is up to 100 cycles. The cells are currently the best performing solution processed phase change material based memory devices reported so far.