具有高纠错效率6(Perror)2的自旋电子学原始门,用于逻辑存储器结构

Y. Tsuji, R. Nebashi, N. Sakimura, A. Morioka, H. Honjo, K. Tokutome, S. Miura, T. Suzuki, S. Fukami, K. Kinoshita, T. Hanyu, T. Endoh, N. Kasai, H. Ohno, T. Sugibayashi
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引用次数: 14

摘要

利用畴壁运动单元设计了具有冗余度的自旋电子学基元门,当每个畴壁运动单元的误差率为Perror时,数据丢失率显著提高到~6 (Perror)2。所有串联排列的DWM单元同时写入,抑制了写入时功耗的增加。4端DWM单元的应用具有物理分离的写入和读取电流路径,节省了冗余的额外路径晶体管,并且没有面积开销。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Spintronics primitive gate with high error correction efficiency 6(Perror)2 for logic-in memory architecture
A spintronics primitive gate with redundancy was designed using domain wall motion (DWM) cells, and the data-missing rate was drastically improved to ~6 (Perror)2 when the error rate per DWM cell was Perror. All the DWM cells aligned in series were written simultaneously, which suppressed the increase in power consumption when writing. Application of 4-terminal DWM cells with physically separated current paths for writing and reading saved extra path transistors for redundancy and there were no area overheads.
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