Y. Tsuji, R. Nebashi, N. Sakimura, A. Morioka, H. Honjo, K. Tokutome, S. Miura, T. Suzuki, S. Fukami, K. Kinoshita, T. Hanyu, T. Endoh, N. Kasai, H. Ohno, T. Sugibayashi
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Spintronics primitive gate with high error correction efficiency 6(Perror)2 for logic-in memory architecture
A spintronics primitive gate with redundancy was designed using domain wall motion (DWM) cells, and the data-missing rate was drastically improved to ~6 (Perror)2 when the error rate per DWM cell was Perror. All the DWM cells aligned in series were written simultaneously, which suppressed the increase in power consumption when writing. Application of 4-terminal DWM cells with physically separated current paths for writing and reading saved extra path transistors for redundancy and there were no area overheads.