具有优良的低导通电压的600 V沟栅NPT-IGBT

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856825

M. Tanaka, S. Teramae, Y. Takahashi, T. Takeda, M. Yamaguchi, T. Ogura, T. Tsunoda, S. Nakao

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引用次数: 5

摘要

研制了具有低导通电压(V/sub CE/(sat))的600 V Non-Punch Through (NPT) IGBT。该装置在发射极侧具有细间距沟栅结构，在集电极侧具有低注入效率的集电极层。安装了一种新颖的剖面，以实现低喷射效率和低V/sub CE/(sat)。通过数值模拟，证实了沟栅NPT-IGBT的V/sub CE/(sat)与关断损耗之间的权衡关系与沟栅冲通(PT-)IGBT一样好。采用新颖的集电极结构，实现了600 V槽栅NPT-IGBT在180 A/cm/sup 2/下1.6 V的低V/sub CE/(sat)。

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600 V trench-gate NPT-IGBT with excellent low on-state voltage

The 600 V Non-Punch Through (NPT) IGBT which has low on-state voltage (V/sub CE/(sat)) has been developed. This device has a fine pitch trench-gate structure at the emitter side and the collector layer with low injection efficiency at collector side. A novel profile has been installed to realize low injection efficiency and low V/sub CE/(sat). By numerical simulation, it has been confirmed that the trade-off relation between V/sub CE/(sat) and turn-off loss of the trench-gate NPT-IGBT is as good as that of the trench-gate punch through (PT-)IGBT. Adopting the novel profile for the collector structure, the low V/sub CE/(sat) of 1.6 V at 180 A/cm/sup 2/ has been realized for the 600 V trench-gate NPT-IGBT.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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