超低NMOS接触电阻率，采用新型等离子体DSS植入和激光退火后7 nm节点

2016 IEEE Symposium on VLSI Technology Pub Date : 2016-06-14 DOI:10.1109/VLSIT.2016.7573383

C. Ni, K. V. Rao, F. Khaja, S. Sharma, S. Tang, J. J. Chen, K. Hollar, N. Breil, X. Li, M. Jin, C. Lazik, J. Lee, H. Maynard, N. Variam, A. Mayur, S. Kim, H. Chung, M. Chudzik, R. Hung, N. Yoshida, N. Kim

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引用次数: 26

摘要

我们报道了创纪录的低NMOS接触电阻率1.2×10-9 Ωcm2与Ti/Si体系和掺杂剂偏聚肖特基(DSS)溶液兼容。通过高掺Si:P外延层和共形等离子体注入P后进行毫秒激光退火，证明了Ti/Si体系的超低接触电阻率。此外，我们发现短脉冲纳秒激光作为植入后退火提供了一条有希望的途径，可以进一步将NMOS ρC提高到7 nm后节点的1×10-9 Ωcm2以下。

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Ultra-low NMOS contact resistivity using a novel plasma-based DSS implant and laser anneal for post 7 nm nodes

We report a record-setting low NMOS contact resistivity of 1.2×10^-9 Ωcm² compatible with Ti/Si system and dopant segregation Schottky (DSS) based solution. The ultra-low contact resistivity of Ti/Si system is demonstrated with Highly Doped Si:P Epi layer and P implantation using conformal plasma implant followed by millisecond laser anneal. Additionally, we show that short-pulse nanosecond laser as post implant anneal provides a promising pathway to further improve NMOS ρ_C to below 1×10^-9 Ωcm² for the post 7 nm nodes.

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2016 IEEE Symposium on VLSI Technology

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