S. Yamasaki, T. Makino, D. Takeuchi, M. Ogura, H. Kato, T. Matsumoto, T. Iwasaki, M. Hatano, M. Suzuki, S. Koizumi, H. Ohashi, H. Okushi
{"title":"金刚石动力器件的潜力","authors":"S. Yamasaki, T. Makino, D. Takeuchi, M. Ogura, H. Kato, T. Matsumoto, T. Iwasaki, M. Hatano, M. Suzuki, S. Koizumi, H. Ohashi, H. Okushi","doi":"10.1109/ISPSD.2013.6694410","DOIUrl":null,"url":null,"abstract":"For the next generation power devices, we have developed several types of unique diamond power devices. By these device performances, we conclude that by using the unique properties of diamond in addition to the superior structural FOM (figure of merit) the diamond power devices have high potential for the power devices. We discuss the potential of diamond power devices, specially, for ultra-high voltage application.","PeriodicalId":175520,"journal":{"name":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Potential of diamond power devices\",\"authors\":\"S. Yamasaki, T. Makino, D. Takeuchi, M. Ogura, H. Kato, T. Matsumoto, T. Iwasaki, M. Hatano, M. Suzuki, S. Koizumi, H. Ohashi, H. Okushi\",\"doi\":\"10.1109/ISPSD.2013.6694410\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For the next generation power devices, we have developed several types of unique diamond power devices. By these device performances, we conclude that by using the unique properties of diamond in addition to the superior structural FOM (figure of merit) the diamond power devices have high potential for the power devices. We discuss the potential of diamond power devices, specially, for ultra-high voltage application.\",\"PeriodicalId\":175520,\"journal\":{\"name\":\"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)\",\"volume\":\"102 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2013.6694410\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2013.6694410","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
For the next generation power devices, we have developed several types of unique diamond power devices. By these device performances, we conclude that by using the unique properties of diamond in addition to the superior structural FOM (figure of merit) the diamond power devices have high potential for the power devices. We discuss the potential of diamond power devices, specially, for ultra-high voltage application.