{"title":"一种用于蓝牙应用的高集成SiGe BiCMOS F类功率放大器","authors":"Jia-Liang Chen, T. Chiu, C. Jou","doi":"10.1109/VDAT.2006.258183","DOIUrl":null,"url":null,"abstract":"A highly integrated 2.4-GHz class F power amplifier using TSMC 0.35mum 3P3M standard SiGe BiCMOS process is presented. This amplifier integrates both the input matching network and output fundamental and third harmonic loading networks onto the chip. Additional fine tuning output circuit is implemented outside the chip for some flexibility. Measurement results show that the power amplifier can exhibit an output power about 20dBm, with power added efficiency (PAE) of 34.2% at 2.4-GHz Bluetooth frequency band. This result demonstrates the potential of full-scale integration of the high efficiency power amplifier","PeriodicalId":356198,"journal":{"name":"2006 International Symposium on VLSI Design, Automation and Test","volume":"2013 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A highly Integrated SiGe BiCMOS Class F Power Amplifier for Bluetooth Application\",\"authors\":\"Jia-Liang Chen, T. Chiu, C. Jou\",\"doi\":\"10.1109/VDAT.2006.258183\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A highly integrated 2.4-GHz class F power amplifier using TSMC 0.35mum 3P3M standard SiGe BiCMOS process is presented. This amplifier integrates both the input matching network and output fundamental and third harmonic loading networks onto the chip. Additional fine tuning output circuit is implemented outside the chip for some flexibility. Measurement results show that the power amplifier can exhibit an output power about 20dBm, with power added efficiency (PAE) of 34.2% at 2.4-GHz Bluetooth frequency band. This result demonstrates the potential of full-scale integration of the high efficiency power amplifier\",\"PeriodicalId\":356198,\"journal\":{\"name\":\"2006 International Symposium on VLSI Design, Automation and Test\",\"volume\":\"2013 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-04-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Symposium on VLSI Design, Automation and Test\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VDAT.2006.258183\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Symposium on VLSI Design, Automation and Test","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VDAT.2006.258183","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A highly Integrated SiGe BiCMOS Class F Power Amplifier for Bluetooth Application
A highly integrated 2.4-GHz class F power amplifier using TSMC 0.35mum 3P3M standard SiGe BiCMOS process is presented. This amplifier integrates both the input matching network and output fundamental and third harmonic loading networks onto the chip. Additional fine tuning output circuit is implemented outside the chip for some flexibility. Measurement results show that the power amplifier can exhibit an output power about 20dBm, with power added efficiency (PAE) of 34.2% at 2.4-GHz Bluetooth frequency band. This result demonstrates the potential of full-scale integration of the high efficiency power amplifier
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