在三维基板上的光刻技术

P. Ivey, R. McWilliam, A. Maiden, G. Williams, A. Purvis, L. Seed
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引用次数: 1

摘要

光刻技术是平面基底图案化的主要技术。然而,一些高密度的封装解决方案需要在非平面基底上刻印时间特征,例如,在机械、光学和流体微系统和封装方案中。标准光刻不能用于这些情况,因为(平面)掩模和(非平面)衬底之间不可避免的间隙会导致衍射线展宽和分辨率损失。我们通过将掩模实现为计算机生成的全息图(CGH)来解决这个问题,然后可以照亮掩模以在空间中生成与所需的非平面轮廓相对应的图像。CGHs由解析表达式推导而来,同时编码振幅和相位信息。我们以平面/斜坡/平面的形式将一条100毫米的线暴露在基板上,其中深度变化为40mm。讨论了对线形的增强,使该技术对制造过程的变化更加稳健。在10-100微米范围内的特征可以在远距离成像,同时应对深度的显著变化,这表明该技术在微电子封装行业显示出巨大的潜力
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Photolithography on three dimensional substrates
Photolithography is the primary technique for patterning planar substrates. However, some higher-density packaging solutions require tine features to be patterned onto grossly non-planar substrates, for example, in mechanical, optical and fluidic microsystems and packaging schemes. Standard photolithography cannot be used in these cases because the inevitable gap between the (planar) mask and (non-planar) substrate causes diffractive line broadening and loss of resolution. We address this issue by realising the mask as a computer generated hologram (CGH), which can then be illuminated to generate an image in space corresponding to the required non-planar profile. The CGHs are derived from analytical expressions and encode both amplitude and phase information. We illustrate the performance with a 100 mum line exposed onto a substrate in the form of a plane/slope/plane, in which the change in depth is 40mm. Enhancements to the line shape are discussed that make the technique more robust to manufacturing process variations. The fact that features in the range 10-100 mum can be imaged at large distance whilst coping with significant changes of depth indicates that the technique shows great potential in the microelectronics packaging industry
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