{"title":"一个脉冲-射频、脉冲偏置s参数系统的构建与基准测试","authors":"C. Baylis, L. Dunleavy, J. Martens","doi":"10.1109/ARFTG.2005.8373133","DOIUrl":null,"url":null,"abstract":"A pulsed-bias, pulsed-RF S-parameter system has been assembled and validated through a systematic benchmarking process. The system was constructed using an Anritsu 37397C Lightning Vector Network Analyzer, along with an external switch, a digital delay generator, and a custom bias tee. A series of benchmarking tests, using passive and active DUTs, was performed to exercise and validate the system. A range of test setup conditions, including varied pulse lengths and duty cycles, were examined. A passive filter was used to explore the dynamic range and effective noise floor of the pulsed S-parameter measurement as compared to CW measurements. Finally, a Si LDMOSFET was measured and the pulsed- and continuous-bias measurement results were found to show dispersion in |S21| due to device self-heating in the continuous-bias case.","PeriodicalId":444012,"journal":{"name":"2005 66th ARFTG Microwave Measurement Conference (ARFTG)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Constructing and benchmarking a pulsed-RF, pulsed-bias S-parameter system\",\"authors\":\"C. Baylis, L. Dunleavy, J. Martens\",\"doi\":\"10.1109/ARFTG.2005.8373133\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A pulsed-bias, pulsed-RF S-parameter system has been assembled and validated through a systematic benchmarking process. The system was constructed using an Anritsu 37397C Lightning Vector Network Analyzer, along with an external switch, a digital delay generator, and a custom bias tee. A series of benchmarking tests, using passive and active DUTs, was performed to exercise and validate the system. A range of test setup conditions, including varied pulse lengths and duty cycles, were examined. A passive filter was used to explore the dynamic range and effective noise floor of the pulsed S-parameter measurement as compared to CW measurements. Finally, a Si LDMOSFET was measured and the pulsed- and continuous-bias measurement results were found to show dispersion in |S21| due to device self-heating in the continuous-bias case.\",\"PeriodicalId\":444012,\"journal\":{\"name\":\"2005 66th ARFTG Microwave Measurement Conference (ARFTG)\",\"volume\":\"106 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 66th ARFTG Microwave Measurement Conference (ARFTG)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARFTG.2005.8373133\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 66th ARFTG Microwave Measurement Conference (ARFTG)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.2005.8373133","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Constructing and benchmarking a pulsed-RF, pulsed-bias S-parameter system
A pulsed-bias, pulsed-RF S-parameter system has been assembled and validated through a systematic benchmarking process. The system was constructed using an Anritsu 37397C Lightning Vector Network Analyzer, along with an external switch, a digital delay generator, and a custom bias tee. A series of benchmarking tests, using passive and active DUTs, was performed to exercise and validate the system. A range of test setup conditions, including varied pulse lengths and duty cycles, were examined. A passive filter was used to explore the dynamic range and effective noise floor of the pulsed S-parameter measurement as compared to CW measurements. Finally, a Si LDMOSFET was measured and the pulsed- and continuous-bias measurement results were found to show dispersion in |S21| due to device self-heating in the continuous-bias case.