一个脉冲-射频、脉冲偏置s参数系统的构建与基准测试

C. Baylis, L. Dunleavy, J. Martens
{"title":"一个脉冲-射频、脉冲偏置s参数系统的构建与基准测试","authors":"C. Baylis, L. Dunleavy, J. Martens","doi":"10.1109/ARFTG.2005.8373133","DOIUrl":null,"url":null,"abstract":"A pulsed-bias, pulsed-RF S-parameter system has been assembled and validated through a systematic benchmarking process. The system was constructed using an Anritsu 37397C Lightning Vector Network Analyzer, along with an external switch, a digital delay generator, and a custom bias tee. A series of benchmarking tests, using passive and active DUTs, was performed to exercise and validate the system. A range of test setup conditions, including varied pulse lengths and duty cycles, were examined. A passive filter was used to explore the dynamic range and effective noise floor of the pulsed S-parameter measurement as compared to CW measurements. Finally, a Si LDMOSFET was measured and the pulsed- and continuous-bias measurement results were found to show dispersion in |S21| due to device self-heating in the continuous-bias case.","PeriodicalId":444012,"journal":{"name":"2005 66th ARFTG Microwave Measurement Conference (ARFTG)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Constructing and benchmarking a pulsed-RF, pulsed-bias S-parameter system\",\"authors\":\"C. Baylis, L. Dunleavy, J. Martens\",\"doi\":\"10.1109/ARFTG.2005.8373133\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A pulsed-bias, pulsed-RF S-parameter system has been assembled and validated through a systematic benchmarking process. The system was constructed using an Anritsu 37397C Lightning Vector Network Analyzer, along with an external switch, a digital delay generator, and a custom bias tee. A series of benchmarking tests, using passive and active DUTs, was performed to exercise and validate the system. A range of test setup conditions, including varied pulse lengths and duty cycles, were examined. A passive filter was used to explore the dynamic range and effective noise floor of the pulsed S-parameter measurement as compared to CW measurements. Finally, a Si LDMOSFET was measured and the pulsed- and continuous-bias measurement results were found to show dispersion in |S21| due to device self-heating in the continuous-bias case.\",\"PeriodicalId\":444012,\"journal\":{\"name\":\"2005 66th ARFTG Microwave Measurement Conference (ARFTG)\",\"volume\":\"106 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 66th ARFTG Microwave Measurement Conference (ARFTG)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARFTG.2005.8373133\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 66th ARFTG Microwave Measurement Conference (ARFTG)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.2005.8373133","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

一个脉冲偏置,脉冲射频s参数系统已经组装并通过系统的基准测试过程验证。该系统使用安立公司37397C闪电矢量网络分析仪,以及外部开关,数字延迟发生器和定制偏置三通来构建。使用被动和主动dut进行了一系列基准测试,以测试和验证该系统。一系列的测试设置条件,包括不同的脉冲长度和占空比,进行了检查。与连续波测量相比,采用无源滤波器探索脉冲s参数测量的动态范围和有效本底噪声。最后,测量了一个Si LDMOSFET,发现脉冲偏置和连续偏置的测量结果在|S21|中由于器件在连续偏置情况下的自加热而出现色散。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Constructing and benchmarking a pulsed-RF, pulsed-bias S-parameter system
A pulsed-bias, pulsed-RF S-parameter system has been assembled and validated through a systematic benchmarking process. The system was constructed using an Anritsu 37397C Lightning Vector Network Analyzer, along with an external switch, a digital delay generator, and a custom bias tee. A series of benchmarking tests, using passive and active DUTs, was performed to exercise and validate the system. A range of test setup conditions, including varied pulse lengths and duty cycles, were examined. A passive filter was used to explore the dynamic range and effective noise floor of the pulsed S-parameter measurement as compared to CW measurements. Finally, a Si LDMOSFET was measured and the pulsed- and continuous-bias measurement results were found to show dispersion in |S21| due to device self-heating in the continuous-bias case.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信