{"title":"CMOS MEMS洛伦兹力双轴扫描级","authors":"Chili-Ming Sun, Chuanwei Wang, W. Fang","doi":"10.1109/NEMS.2007.352086","DOIUrl":null,"url":null,"abstract":"This study presents a novel dual-axis CMOS MEMS scanning stage driven using the Lorentz force. The device has been successfully implemented using the TSMC 2P4M process. The current routing achieved by three metal layers enables the independent driving for each axis. The measurement results show that the device has resonant frequencies of 1.36KHz and 2.26KHz respectively for each axis.","PeriodicalId":364039,"journal":{"name":"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"CMOS MEMS Lorentz Force Dual-axis Scanning-Stage\",\"authors\":\"Chili-Ming Sun, Chuanwei Wang, W. Fang\",\"doi\":\"10.1109/NEMS.2007.352086\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study presents a novel dual-axis CMOS MEMS scanning stage driven using the Lorentz force. The device has been successfully implemented using the TSMC 2P4M process. The current routing achieved by three metal layers enables the independent driving for each axis. The measurement results show that the device has resonant frequencies of 1.36KHz and 2.26KHz respectively for each axis.\",\"PeriodicalId\":364039,\"journal\":{\"name\":\"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEMS.2007.352086\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEMS.2007.352086","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This study presents a novel dual-axis CMOS MEMS scanning stage driven using the Lorentz force. The device has been successfully implemented using the TSMC 2P4M process. The current routing achieved by three metal layers enables the independent driving for each axis. The measurement results show that the device has resonant frequencies of 1.36KHz and 2.26KHz respectively for each axis.